公开(公告)号：US08022452B2

公开(公告)日：2011-09-20

申请号：US12333532

申请日：2008-12-12

申请人： Shen Wang ,  Robert P. Fabinski ,  Robert Kaser

发明人： Shen Wang ,  Robert P. Fabinski ,  Robert Kaser

IPC分类号： H01L31/0232

CPC分类号： H01L27/14818 ,  H01L27/14623 ,  H01L27/1463 ,  H01L31/02164

摘要： A source/drain region of a transistor or amplifier is formed in a substrate layer and is connected to a voltage source. A glow blocking structure is formed at least partially around the source/drain region and is disposed between the source/drain region and an imaging array of an image sensor. A trench is formed in the substrate layer adjacent to and at least partially around the source/drain region. The glow blocking structure includes an opaque material formed in the trench and one or more layers of light absorbing material overlying the source/drain region and the opaque material.

摘要翻译： 晶体管或放大器的源极/漏极区域形成在衬底层中并连接到电压源。 至少部分地围绕源极/漏极区域形成辉光阻挡结构，并且设置在源极/漏极区域与图像传感器的成像阵列之间。 在衬底层中形成沟槽，其邻近并且至少部分地围绕源极/漏极区域。 辉光阻挡结构包括形成在沟槽中的不透明材料和覆盖源极/漏极区域和不透明材料的一层或多层光吸收材料。

公开(公告)号：US20100148231A1

公开(公告)日：2010-06-17

申请号：US12333532

申请日：2008-12-12

申请人： Shen Wang ,  Robert P. Fabinski ,  Robert Kaser

发明人： Shen Wang ,  Robert P. Fabinski ,  Robert Kaser

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/14818 ,  H01L27/14623 ,  H01L27/1463 ,  H01L31/02164

摘要： A source/drain region of a transistor or amplifier is formed in a substrate layer and is connected to a voltage source. A glow blocking structure is formed at least partially around the source/drain region and is disposed between the source/drain region and an imaging array of an image sensor. A trench is formed in the substrate layer adjacent to and at least partially around the source/drain region. The glow blocking structure includes an opaque material formed in the trench and one or more layers of light absorbing material overlying the source/drain region and the opaque material.

摘要翻译： 晶体管或放大器的源极/漏极区域形成在衬底层中并连接到电压源。 至少部分地围绕源极/漏极区域形成辉光阻挡结构，并且设置在源极/漏极区域与图像传感器的成像阵列之间。 在衬底层中形成沟槽，其邻近并且至少部分地围绕源极/漏极区域。 辉光阻挡结构包括形成在沟槽中的不透明材料和覆盖源/漏区和不透明材料的一层或多层光吸收材料。