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    Readout backside processing for hybridization
    2.
    发明授权
    Readout backside processing for hybridization 失效
    读出背面处理杂交

    公开(公告)号：US5827771A

    公开(公告)日：1998-10-27

    申请号：US618135

    申请日：1996-03-19

    Applicant: Robert P. Ginn ,  Joan K. Chia ,  Stephen H. Propst

    Inventor： Robert P. Ginn ,  Joan K. Chia ,  Stephen H. Propst

    IPC: H01L21/30 ,  H01L21/66 ,  G01R31/26 ,  H01L21/46

    CPC classification number: H01L22/20 ,  H01L21/30 ,  H01L2924/3511

    Abstract: This invention pertains to a method for processing readout integrated circuits, and to a readout integrated circuit (10) that is processed in accordance with the method. The method includes a first step of providing a plurality of individual readout circuits each having a substrate (12) and at least one layer (14) constructed to have active circuitry that overlies a first surface (12a) of the substrate. Each of the readout integrated circuits has an associated amount of non-flatness or bowing due at least in part to a first force exerted on the substrate by the at least one layer of circuitry. A next step sorts the plurality of readout integrated circuits into a plurality of groups (A, B, C), wherein members of a group have a similar amount of non-flatness. A next step of the method determines, for each group, a thickness of compensating layer (18) and then applies the compensating layer on a second surface (12b) of the substrate so as to exert a second force on the substrate to counteract the first force and to reduce the amount of non-flatness. In a presently preferred embodiment of the invention the step of applying includes a step of sputtering a layer comprised of Si.sub.3 N.sub.4 upon the second surface. The step of sorting includes the steps of operating an interferometer to generate a pattern of fringes for indicating a degree of non-flatness of each of the readout integrated circuits; and counting the fringes and sorting the readout integrated circuits as a function of the number of fringes.

    Abstract translation: 本发明涉及一种用于处理读出集成电路的方法，以及根据该方法处理的读出集成电路（10）。 该方法包括提供多个单独读出电路的第一步骤，每个读出电路都具有衬底（12）和至少一个层（14），其被构造成具有覆盖衬底的第一表面（12a）的有源电路。 每个读出集成电路具有至少部分地由至少一个电路层施加在衬底上的第一力的非平坦度或弯曲度的相关量。 下一步将多个读出集成电路分成多个组（A，B，C），其中组的成员具有相似的非平坦度。 该方法的下一步骤对于每个组确定补偿层（18）的厚度，然后将补偿层施加在衬底的第二表面（12b）上，以便在衬底上施加第二力以抵抗第一 力量并减少非平坦度。 在本发明的当前优选实施例中，施加步骤包括在第二表面上溅射由Si 3 N 4构成的层的步骤。 排序步骤包括操作干涉仪以产生用于指示每个读出集成电路的非平坦度的条纹图案的步骤; 并根据条纹数量对边缘进行计数并对读出的集成电路进行排序。

    Infrared photodiodes and sensor arrays with improved passivation layers and methods of manufacture
    6.
    发明授权
    Infrared photodiodes and sensor arrays with improved passivation layers and methods of manufacture 有权
    具有改进的钝化层的红外光电二极管和传感器阵列以及制造方法

    公开(公告)号：US07544532B2

    公开(公告)日：2009-06-09

    申请号：US11582937

    申请日：2006-10-17

    Applicant: Robert P. Ginn ,  Kenneth A. Gerber ,  Andreas Hampp ,  Alexander C. Childs

    Inventor： Robert P. Ginn ,  Kenneth A. Gerber ,  Andreas Hampp ,  Alexander C. Childs

    IPC: H01L21/00 ,  H01L31/00

    CPC classification number: H01L27/14683 ,  H01L27/144 ,  H01L27/1469 ,  H01L31/0304 ,  H01L31/184

    Abstract: InSb infrared photodiodes and sensor arrays with improved passivation layers and methods for making same are disclosed. In the method, a passivation layer of AlInSb is deposited on an n-type InSb substrate using molecular beam epitaxy before photodiode detector regions are formed in the n-type substrate. Then, a suitable P+ dopant is implanted directly through the AlInSb passivation layer to form photodiode detector regions. Next, the AlInSb passivation layer is selectively removed, exposing first regions of the InSb substrate, and gate contacts are formed in the first regions of the InSb substrate. Then, additional portions of the AlInSb passivation layer are selectively removed above the photodiode detectors exposing second regions. Next, metal contacts are formed in the second regions, and bump contacts are formed atop the metal contacts. Then, an antireflection coating is applied to a side of the substrate opposite from the side having the metal and bump contacts. Forming the AlInSb passivation layer before the photodiode detector regions reduces the number of defects created in the n-type InSb substrate during fabrication in comparison to conventional methods and improves the noise performance of InSb photodiodes and sensor arrays incorporating the improved passivation layer.

    Abstract translation: 公开了具有改进的钝化层的InSb红外光电二极管和传感器阵列及其制造方法。 在该方法中，在n型衬底中形成光电二极管检测器区域之前，使用分子束外延，在n型InSb衬底上沉积钝化层AlInSb。 然后，通过AlInSb钝化层直接注入合适的P +掺杂剂，以形成光电二极管检测器区域。 接下来，选择性地去除AlInSb钝化层，暴露InSb衬底的第一区域，并且在InSb衬底的第一区域中形成栅极接触。 然后，在暴露第二区域的光电二极管检测器上方选择性地去除AlInSb钝化层的附加部分。 接下来，在第二区域中形成金属触点，并且在金属触点顶部形成凸点触点。 然后，将抗反射涂层施加到与具有金属和凸块接触的一侧相对的基板的一侧。 与传统方法相比，在光电二极管检测器区域之前形成AlInSb钝化层减少了在制造期间在n型InSb衬底中产生的缺陷的数量，并且改善了纳入改进的钝化层的InSb光电二极管和传感器阵列的噪声性能。

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