公开(公告)号：US20050235231A1

公开(公告)日：2005-10-20

申请号：US10823981

申请日：2004-04-14

Applicant: Robin Almes ,  Mark Church ,  Mary Gutberlet ,  Jiunn Tsay ,  Benjamin Wang

Inventor： Robin Almes ,  Mark Church ,  Mary Gutberlet ,  Jiunn Tsay ,  Benjamin Wang

IPC: G03F7/20 ,  G06F17/50 ,  G11B5/31 ,  G11B5/39

CPC classification number: G11B5/3903 ,  G03F1/78 ,  G11B5/3163

Abstract: A charge-balanced, continuous-write mask and wafer process changes the magneto resistive photo-definition step to a two-mask step operation. Critical images are written on one mask layer at a very small electron beam spot size, and non-critical images are written on a second mask layer at a relatively larger electron beam spot size. Both mask layers are put onto the same glass substrate where the critical mask layer is located at the most accurate position on the substrate. The non-critical images may be placed in a peripheral field. In wafer processing, the critical field is aligned and exposed onto the wafer and then the non-critical field is aligned and exposed.

Abstract translation: 电荷平衡，连续写入掩模和晶片处理将磁阻照相分辨步骤改变为双掩模步骤操作。 临界图像以非常小的电子束斑尺寸写在一个掩模层上，并且非相关图像以相对较大的电子束斑尺寸写在第二掩模层上。 将两个掩模层放置在相同的玻璃基板上，其中临界掩模层位于基板上最精确的位置。 非关键图像可以被放置在外围场中。 在晶片处理中，临界场对准并暴露在晶片上，然后非关键场对准和暴露。