公开(公告)号：US20180210353A1

公开(公告)日：2018-07-26

申请号：US15834351

申请日：2017-12-07

申请人： NUFLARE TECHNOLOGY, INC.

发明人： Rieko Nishimura ,  Hidekazu Takekoshi

IPC分类号： G03F9/00 ,  G03F7/20

CPC分类号： G03F9/7049 ,  G01B9/02 ,  G03F1/78 ,  G03F7/2059 ,  G03F7/70383 ,  G03F7/70725 ,  G03F7/70775 ,  H01J37/3175

摘要： According to one aspect of the present invention, a method of correcting a position of a stage mechanism, includes generating a two-dimensional map of a distortion amount at a position of a stage by applying a distortion amount of a position in a first direction of the stage at each of measured positions in a second direction as a distortion amount of a position in the first direction of the stage at each position in the second direction at each position in the first direction and by applying a distortion amount of a position in the second direction of the stage at each of measured positions in the first direction as a distortion amount of a position in the second direction of the stage at each position in the first direction at each position in the second direction; and correcting position data by using the two-dimensional map.

公开(公告)号：US09990460B2

公开(公告)日：2018-06-05

申请号：US15282131

申请日：2016-09-30

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsu-Ting Huang ,  Shuo-Yen Chou ,  Ru-Gun Liu

IPC分类号： G06F17/50 ,  G03F1/78

CPC分类号： G06F17/5081 ,  G03F1/70 ,  G03F1/78 ,  G06F2217/08

摘要： Source beam optimization (SBO) methods are disclosed herein for enhancing lithography printability. An exemplary method includes receiving an integrated circuit (IC) design layout and performing an SBO process using the IC design layout to generate a mask shot map and an illumination source map. The SBO process uses an SBO model that collectively simulates a mask making process using the mask shot mask and a wafer making process using the illumination source map. A mask can be fabricated using the mask shot map, and a wafer can be fabricated using the illumination source map (and, in some implementations, using the mask fabricated using the mask shot map). The wafer includes a final wafer pattern that corresponds with a target wafer pattern defined by the IC design layout. The SBO methods disclosed herein can significantly reduce (or eliminate) variances between the final wafer pattern and the target wafer pattern.

公开(公告)号：US20180060474A1

公开(公告)日：2018-03-01

申请号：US15691951

申请日：2017-08-31

申请人： NuFlare Technology, Inc.

发明人： Shigehiro HARA ,  Kenichi YASUI

IPC分类号： G06F17/50

CPC分类号： G06F17/5045 ,  G03F1/78 ,  G06K9/4604 ,  G06K9/4647 ,  G06K9/52 ,  H01J37/3026 ,  H01J37/3177 ,  H01J2237/31762 ,  H01J2237/31764

摘要： In one embodiment, a generating method of drawing data includes generating a pixel map that includes dose amount information on each of pixels obtained by dividing a drawing area on an object into a mesh, extracting, from the pixel map, an island-shaped pixel map which is a group of multiple pixels in which the dose amount information is not zero, determining an order of definition of the dose amount information on the pixels in the island-shaped pixel map, and generating a compressed pixel map including a size of the pixels, information indicating the order of definition, coordinates of a pixel which is first in the order of definition in the island-shaped pixel map, and the dose amount information on the pixels in the island-shaped pixel map, the dose amount information being continuously defined based on the order of definition.

公开(公告)号：US20170357153A1

公开(公告)日：2017-12-14

申请号：US15620599

申请日：2017-06-12

申请人： IMS Nanofabrication AG

发明人： Elmar Platzgummer

IPC分类号： G03F1/36 ,  G06F17/50

CPC分类号： H01J37/3177 ,  G03F1/78

摘要： A method for compensating pattern placement errors during writing a pattern on a target in a charged-particle multi-beam exposure apparatus including a layout generated by exposing a plurality of beam field frames using a beam of electrically charged particles, wherein each beam field frame has a respective local pattern density, corresponding to exposure doses imparted to the target when exposing the respective beam field frames. During writing the beam field frames, the positions deviate from respective nominal positions because of build-up effects within said exposure apparatus, depending on the local pattern density evolution during writing the beam field frames. To compensate, a displacement behavior model is employed to predict displacements; a local pattern density evolution is determined, displacements of the beam field frames are predicted based on the local pattern density evolution and the displacement behavior model, and the beam field frames are repositioned accordingly based on the predicted values.

公开(公告)号：US09726983B2

公开(公告)日：2017-08-08

申请号：US15219024

申请日：2016-07-25

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Yen-Cheng Lu ,  Chih-Tsung Shih ,  Jeng-Horng Chen ,  Shinn-Sheng Yu ,  Anthony Yen

IPC分类号： G03F7/20 ,  G03F1/78 ,  G03F7/36 ,  H01L21/027 ,  H01L21/311 ,  H01L21/768 ,  H01L21/033 ,  G03F7/095

CPC分类号： G03F7/70558 ,  G03F1/78 ,  G03F7/095 ,  G03F7/20 ,  G03F7/2022 ,  G03F7/2037 ,  G03F7/2059 ,  G03F7/36 ,  H01J2237/31769 ,  H01J2237/31796 ,  H01L21/0274 ,  H01L21/0277 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76811

摘要： The present disclosure provides a method that includes forming a first patternable material layer on a substrate; forming a second patternable material layer over the first patternable material layer; and performing a charged particle beam lithography exposure process to the first patternable material layer and the second patternable material layer, thereby forming a first latent feature in the first patternable material layer.

公开(公告)号：US20170160634A1

公开(公告)日：2017-06-08

申请号：US14888418

申请日：2015-09-25

申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.

发明人： Huan LIU ,  Zui WANG ,  Jinbo GUO ,  Shih-hsun LO

IPC分类号： G03F1/70 ,  G03F7/00 ,  G03F1/78 ,  G03F1/36

CPC分类号： G03F1/70 ,  G02F1/1339 ,  G02F1/13394 ,  G03F1/36 ,  G03F1/78 ,  G03F7/0005 ,  G03F7/0007 ,  G03F7/70283

摘要： A spacer manufacturing device is disclosed. The device includes a photo mask having a central light-transmitting region and a peripheral light-transmitting region disposed at a periphery of the central light-transmitting region; and an exposure device right opposite to the photo mask. Wherein, light emitted from the exposure device is irradiated to a negative photoresist material after passing through the photo mask, the light intensity passing through the peripheral light-transmitting region is less than the light intensity passing through the central light-transmitting region. A spacer is also disclosed. Only one exposure process is required to realize the spacer having a convex-shaped cross section. The process is simple and the manufacturing cost is low. At the same time, a flatness of the convex shoulder of the spacer having a convex-shaped cross section is adjustable, which can satisfy the requirement for manufacturing spacers having different specifications.

公开(公告)号：US20170123327A1

公开(公告)日：2017-05-04

申请号：US15240105

申请日：2016-08-18

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sung-hoon JANG ,  Sang-hwa LEE

IPC分类号： G03F7/20 ,  G03F1/76 ,  G03F1/78 ,  G03F1/72

CPC分类号： G03F7/70441 ,  G03F1/36 ,  G03F1/72 ,  G03F1/76 ,  G03F1/78 ,  G03F7/70941

摘要： An optical proximity correction method includes loading a target layout for a mask, generating a correction density map based on manipulation of flare to correct global errors caused by exposing equipment, generating a flare map via convolution integration of the correction density map and a point spread function (PSF) regarding the flare, and correcting the target layout using the flare map and an OPC model.

公开(公告)号：US20170082921A1

公开(公告)日：2017-03-23

申请号：US15218284

申请日：2016-07-25

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jong-su KIM ,  Shuichi TAMAMUSHI ,  In-kyun SHIN ,  Sung-il LEE ,  Jin CHOI

IPC分类号： G03F1/70 ,  G03F1/72

CPC分类号： G03F1/70 ,  G03F1/78 ,  G03F7/2059 ,  G03F7/70616 ,  G03F7/70875

摘要： A method of manufacturing a reticle, the method including preparing a substrate, determining position data of a pattern to be formed on the substrate, and setting a primary exposure condition to form the pattern; performing a primary exposure simulation regarding the substrate based on the position data of the pattern and the primary exposure condition; calculating a primary deformation rate of the substrate, which is generated in the primary exposure simulation; correcting the position data of the pattern based on the primary deformation rate of the substrate to provide a corrected position data of the pattern; and exposing the substrate under the primary exposure condition based on the corrected position data of the pattern.

公开(公告)号：US20170045827A1

公开(公告)日：2017-02-16

申请号：US15219024

申请日：2016-07-25

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Yen-Cheng Lu ,  Chih-Tsung Shih ,  Jeng-Horng Chen ,  Shinn-Sheng Yu ,  Anthony Yen

IPC分类号： G03F7/20

CPC分类号： G03F7/70558 ,  G03F1/78 ,  G03F7/095 ,  G03F7/20 ,  G03F7/2022 ,  G03F7/2037 ,  G03F7/2059 ,  G03F7/36 ,  H01J2237/31769 ,  H01J2237/31796 ,  H01L21/0274 ,  H01L21/0277 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76811

摘要： The present disclosure provides a method that includes forming a first patternable material layer on a substrate; forming a second patternable material layer over the first patternable material layer; and performing a charged particle beam lithography exposure process to the first patternable material layer and the second patternable material layer, thereby forming a first latent feature in the first patternable material layer.

摘要翻译： 本公开提供了一种方法，其包括在基底上形成第一图案化材料层; 在所述第一图案化材料层上形成第二图案化材料层; 对所述第一图案化材料层和所述第二图案化材料层进行带电粒子束光刻曝光处理，从而在所述第一图案化材料层中形成第一潜在特征。

公开(公告)号：US20170031237A1

公开(公告)日：2017-02-02

申请号：US15206537

申请日：2016-07-11

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Kouhei SASAMOTO ,  Souichi FUKAYA ,  Yukio INAZUKI

IPC分类号： G03F1/20

CPC分类号： G03F1/20 ,  G03F1/22 ,  G03F1/38 ,  G03F1/78

摘要： In a photomask blank comprising a transparent substrate, a resistance layer, and a conductive layer, the resistivity and thickness of the conductive layer and the resistivity and thickness of the resistance layer are selected so as to meet a specific equation (1). In EB lithography, a ground can be established at a necessary fully low resistance value, and EB writing be carried out at a high accuracy.

摘要翻译： 在包括透明基板，电阻层和导电层的光掩模坯料中，选择导电层的电阻率和厚度以及电阻层的电阻率和厚度，以满足特定的等式（1）。 在EB光刻中，可以以必要的完全低电阻值建立接地，并且以高精度进行EB写入。