公开(公告)号：US5840120A

公开(公告)日：1998-11-24

申请号：US589612

申请日：1996-01-22

Applicant: Kyong-Min Kim ,  Roger W. Shaw ,  Sadasivam Chandrasekhar ,  Richard G. Schrenker

Inventor： Kyong-Min Kim ,  Roger W. Shaw ,  Sadasivam Chandrasekhar ,  Richard G. Schrenker

IPC: C30B15/00 ,  C30B15/14 ,  C30B35/00

CPC classification number: C30B29/06 ,  C30B15/14 ,  C30B15/206

Abstract: An apparatus for producing a silicon single crystal grown by the Czochralski process. The apparatus includes a hollow growth chamber, a quartz crucible disposed within the growth chamber, and a pulling member for pulling a growing silicon single crystal upward from a silicon melt retained in the crucible. A crystal chamber above the growth chamber receives the crystal as it is pulled. A joining member joins the growth chamber and the crystal chamber. A first heating member defining a passageway through which the crystal is pulled, for preventing formation of oxygen precipitate nucleation centers in the crystal until the crystal has been pulled through the passageway, is disposed at least partially within the growth chamber. A second heating member defining a passageway through which the crystal is pulled, for controlling the formation of the oxygen precipitate nucleation centers in the crystal, is disposed within the crystal chamber.

Abstract translation: 一种用于生产通过切克劳斯基（Czochralski）工艺生长的硅单晶的设备。 该设备包括中空生长室，设置在生长室内的石英坩埚，以及用于从保留在坩埚中的硅熔体向上拉出生长的硅单晶的拉动构件。 生长室上方的晶体室在被拉动时接收晶体。 连接构件连接生长室和晶体室。 第一加热构件限定了通过其被拉动的晶体的通道，用于防止在晶体中形成氧沉淀成核中心，直到晶体被拉过通道，至少部分地设置在生长室内。 限定晶体被拉动的通道的第二加热构件设置在晶体室内，用于控制晶体中氧沉淀成核中心的形成。

公开(公告)号：US5573680A

公开(公告)日：1996-11-12

申请号：US283782

申请日：1994-08-01

Applicant: Roger W. Shaw ,  Joseph C. Holzer

Inventor： Roger W. Shaw ,  Joseph C. Holzer

IPC: H01L21/00 ,  H01L21/02

CPC classification number: H01L21/67086 ,  H01L21/67075

Abstract: A method of etching a generally planar surface of a semiconductor material to reveal flow pattern defects on the surface, by placing the material in a canted position, ranging from about 5.degree. to about 35.degree. from vertical, such that the generally planar surface of the material faces upwardly. The material is then immersed into a stagnant etchant solution. The surface of the material is etched such that bubbles nucleating at flow pattern defects on the surface of the canted material are released directly into the otherwise stagnant etchant solution.

Abstract translation: 一种蚀刻半导体材料的大致平坦表面的方法，以通过将材料放置在从垂直方向约5°至约35°的倾斜位置，以使得该表面的大致平坦的表面 材料面向上。 然后将材料浸入静止的蚀刻剂溶液中。 蚀刻材料的表面，使得在倾斜材料的表面上的流动模式缺陷成核的气泡直接释放到另外停滞的蚀刻剂溶液中。

公开(公告)号：US4666532A

公开(公告)日：1987-05-19

申请号：US607349

申请日：1984-05-04

Applicant: Harold W. Korb ,  Claudia P. Reed ,  Roger W. Shaw

Inventor： Harold W. Korb ,  Claudia P. Reed ,  Roger W. Shaw

IPC: H01L21/322 ,  H01L21/324

CPC classification number: H01L21/3225 ,  H01L21/3221 ,  Y10S148/06

Abstract: Semiconductor substrate materials, such as silicon, useful in the manufacture of electronic devices, such as integrated circuits, having a 0.05 to 2.0 micron thick layer of polysilicon on the backside to improve gettering capabilities of defects, contaminants and impurities away from the active device region of the substrate are provided with a 10 to 40 micron deep region from the surface having reduced oxygen concentration. The oxygen denuding is accomplished by heating the substrate material at a temperature of 1050.degree. to 1250.degree. C. first in the presence of oxygen to break up oxygen nuclei, secondly in the presence of oxygen and halogen to permit stacking fault retrogrowth and oxygen outdiffusion, and thirdly in the presence of oxygen, nitrogen and/or argon.

Abstract translation: 用于制造诸如集成电路的电子器件的诸如硅的半导体衬底材料，其背面具有0.05至2.0微米厚的多晶硅层，以提高远离有源器件区域的缺陷，污染物和杂质的吸杂能力 从具有降低的氧浓度的表面提供10至40微米深的区域。 氧脱模是通过在1050〜1250℃的温度下加热基材，首先在氧的存在下分解氧原子，其次在氧和卤素的存在下进行，从而允许堆垛层错生长和氧气扩散， 第三，在氧气，氮气和/或氩气的存在下。