Substrate bias generating circuit
    1.
    发明授权
    Substrate bias generating circuit 失效
    基板偏压发生电路

    公开(公告)号:US5394026A

    公开(公告)日:1995-02-28

    申请号:US12496

    申请日:1993-02-02

    CPC分类号: G05F3/205

    摘要: A substrate bias generating circuit (20) provides a substrate bias voltage to a substrate (50) of an integrated circuit. A voltage-to-current converter circuit (22) provides a constant current proportional to a bandgap generated reference voltage. P-channel transistors (34 and 35) then provide constant current sources for a voltage level sensing circuit (36) based on the bandgap generated reference voltage. The voltage level sensing circuit (36) monitors the level of the substrate bias voltage, and when the substrate bias voltage reaches a predetermined voltage level, provides a first control signal for activating an oscillator (47). A level converter (43) is provided to amplify, or level convert the first control signal for more reliable control of the oscillator. A substrate bias generating circuit (20) provides a precisely controlled substrate bias voltage to the substrate (50) that is independent of process, temperature, and power supply variations.

    摘要翻译: 衬底偏置产生电路(20)向衬底(50)提供衬底偏置电压。 电压 - 电流转换器电路(22)提供与带隙产生的参考电压成比例的恒定电流。 然后,P沟道晶体管(34和35)基于带隙产生的参考电压为电压电平感测电路(36)提供恒定的电流源。 电压电平检测电路(36)监视衬底偏置电压的电平,并且当衬底偏置电压达到预定电压电平时,提供用于激活振荡器(47)的第一控制信号。 提供电平转换器(43)以放大或电平转换第一控制信号以更可靠地控制振荡器。 衬底偏置产生电路(20)向衬底(50)提供精确控制的衬底偏置电压,其独立于过程,温度和电源变化。