公开(公告)号：US08524362B2

公开(公告)日：2013-09-03

申请号：US12856264

申请日：2010-08-13

Applicant: Ganpati Ramanath ,  Theodorian Borca-Tasciuc ,  Rutvik Mehta

Inventor： Ganpati Ramanath ,  Theodorian Borca-Tasciuc ,  Rutvik Mehta

IPC: H01L35/28 ,  B01J19/12 ,  C04B35/64 ,  B32B5/16 ,  C09K5/00

CPC classification number: C04B35/547 ,  B82Y30/00 ,  B82Y40/00 ,  C01B19/007 ,  C01P2002/01 ,  C01P2002/72 ,  C01P2002/85 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/51 ,  C04B35/632 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/446 ,  C04B2235/5292 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/608 ,  C04B2235/726 ,  C04B2235/77 ,  C04B2235/85 ,  H01L35/16

Abstract: Embodiments of the invention are directed to doped pnictogen chalcogenide nanoplates, where each nanoplate comprises a rhombohedral crystal of Bi2Te3, Bi2Se3, or Sb2Te3 that is sulfur doped. Another embodiment of the invention is directed to a microwave activated method of preparation of the doped pnictogen chalcogenide nanoplates. Other embodiments of the invention are directed to bulk assemblies or fused films of the doped pnictogen chalcogenide nanoplates and their preparation from the doped pnictogen chalcogenide nanoplates such that the bulk assembly or fused film can be employed in a thermoelectric device.

Abstract translation: 本发明的实施方案涉及掺杂的硝基硫属化物纳米板，其中每个纳米板包含掺杂硫的Bi2Te3，Bi2Se3或Sb2Te3的菱面体晶体。 本发明的另一个实施方案涉及一种微波激活的掺杂硝基硫属化物纳米板制备方法。 本发明的其它实施方案涉及掺杂的烟草硫属元素化纳米板的本体组件或熔融薄膜及其来自掺杂的烟灰硫化物纳米板的制备，使得本体组件或熔融薄膜可用于热电装置中。

公开(公告)号：US20120111385A1

公开(公告)日：2012-05-10

申请号：US12856264

申请日：2010-08-13

Applicant: GANAPATHIRAMAN RAMANATH ,  Theodorian Borca-Tasciuc ,  Rutvik Mehta

Inventor： GANAPATHIRAMAN RAMANATH ,  Theodorian Borca-Tasciuc ,  Rutvik Mehta

IPC: H01L35/28 ,  B01J19/12 ,  C04B35/64 ,  B32B5/16 ,  C09K5/00 ,  B82Y99/00 ,  H01L35/34

CPC classification number: C04B35/547 ,  B82Y30/00 ,  B82Y40/00 ,  C01B19/007 ,  C01P2002/01 ,  C01P2002/72 ,  C01P2002/85 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/51 ,  C04B35/632 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/446 ,  C04B2235/5292 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/608 ,  C04B2235/726 ,  C04B2235/77 ,  C04B2235/85 ,  H01L35/16

Abstract: Embodiments of the invention are directed to doped pnictogen chalcogenide nanoplates, where each nanoplate comprises a rhombohedral crystal of Bi2Te3, Bi2Se3, or Sb2Te3 that is sulfur doped. Another embodiment of the invention is directed to a microwave activated method of preparation of the doped pnictogen chalcogenide nanoplates. Other embodiments of the invention are directed to bulk assemblies or fused films of the doped pnictogen chalcogenide nanoplates and their preparation from the doped pnictogen chalcogenide nanoplates such that the bulk assembly or fused film can be employed in a thermoelectric device.

Abstract translation: 本发明的实施方案涉及掺杂的硝基硫属化物纳米板，其中每个纳米板包含掺杂硫的Bi2Te3，Bi2Se3或Sb2Te3的菱面体晶体。 本发明的另一个实施方案涉及一种微波激活的掺杂硝基硫属化物纳米板制备方法。 本发明的其它实施方案涉及掺杂的烟草硫属元素化纳米板的本体组件或熔融薄膜及其来自掺杂的烟灰硫化物纳米板的制备，使得本体组件或熔融薄膜可用于热电装置中。