Ultraviolet irradiation apparatus
    1.
    发明授权
    Ultraviolet irradiation apparatus 失效
    紫外线照射装置

    公开(公告)号:US08686401B2

    公开(公告)日:2014-04-01

    申请号:US13701213

    申请日:2011-05-30

    IPC分类号: H01L29/06

    摘要: Provided is a compact ultraviolet irradiation apparatus which is capable of emitting ultraviolet radiation with high efficiency.This ultraviolet irradiation apparatus includes, in a vessel, a semiconductor multi-layered film element and an electron beam irradiation source for irradiating the semiconductor multi-layered film element with an electron beam, the vessel being hermetically sealed to have a negative internal pressure and having an ultraviolet transmitting window. Furthermore, the semiconductor multi-layered film element includes an active layer having a single quantum well structure or a multi quantum well structure of InxAlyGa1-x-yN (0≦x

    摘要翻译: 提供一种能够高效率地发射紫外线的小型紫外线照射装置。 该紫外线照射装置在容器中包括用电子束照射半导体多层膜元件的半导体多层膜元件和电子束照射源,容器被气密地密封以具有负的内部压力并且具有 紫外线传输窗。 此外,半导体多层膜元件包括具有单一量子阱结构或In x Al y Ga 1-x-y N(0&nlE; x <1,0

    ULTRAVIOLET IRRADIATION APPARATUS
    2.
    发明申请
    ULTRAVIOLET IRRADIATION APPARATUS 失效
    超紫外线辐射装置

    公开(公告)号:US20130075697A1

    公开(公告)日:2013-03-28

    申请号:US13701213

    申请日:2011-05-30

    IPC分类号: H01L33/04

    摘要: Provided is a compact ultraviolet irradiation apparatus which is capable of emitting ultraviolet radiation with high efficiency.This ultraviolet irradiation apparatus includes, in a vessel, a semiconductor multi-layered. film element and an electron beam irradiation source for irradiating the semiconductor multi-layered film element with an electron beam, the vessel being hermetically sealed to have a negative internal pressure and having an ultraviolet transmitting window. Furthermore, the semiconductor multi-layered film element includes an active layer having a single quantum well structure or a multi quantum well structure of InxAlyGa1-x-yN (0≦x

    摘要翻译: 提供一种能够高效率地发射紫外线的小型紫外线照射装置。 该紫外线照射装置在容器中包括多层的半导体。 膜元件和用于用电子束照射半导体多层膜元件的电子束照射源,容器被密封以具有负的内部压力并具有紫外线透过窗口。 此外,半导体多层膜元件包括具有单一量子阱结构或In x Al y Ga 1-x-y N(0&nlE; x <1,0