公开(公告)号：US20150366026A1

公开(公告)日：2015-12-17

申请号：US14723942

申请日：2015-05-28

Applicant: STMicrolelectronics International N.V.

Inventor： Jerome Nebon ,  Christophe Forel

IPC: H05B33/08 ,  H01L27/32

CPC classification number: H05B33/0896 ,  G09G3/3233 ,  G09G2300/0814 ,  G09G2320/0247 ,  G09G2320/045

Abstract: An integrated device includes a semiconducting substrate having a matrix of active pixels formed therein. Each active pixel includes an OLED diode, a first nMOS transistor having its source coupled to an anode of the OLED diode, and a refresh circuit coupled to a gate of the first nMOS transistor. The first nMOS transistor has its source and its substrate coupled together. The first nMOS transistor is situated in and on a first part of the semiconductor substrate, and the refresh circuit is situated in and on a second part of the semiconductor substrate, with the first part and the second part being electrically insulated from one another.

Abstract translation: 集成器件包括其中形成有有源像素的矩阵的半导体衬底。 每个有源像素包括OLED二极管，其源极耦合到OLED二极管的阳极的第一nMOS晶体管，以及耦合到第一nMOS晶体管的栅极的刷新电路。 第一个nMOS晶体管具有其源极及其衬底耦合在一起。 第一nMOS晶体管位于半导体衬底的第一部分中并且位于半导体衬底的第一部分上，并且刷新电路位于半导体衬底的第二部分中并位于半导体衬底的第二部分上，其中第一部分和第二部分彼此电绝缘。