公开(公告)号：US20070256928A1

公开(公告)日：2007-11-08

申请号：US11418271

申请日：2006-05-04

Applicant: Samuel Sutton ,  Michael Mills ,  Craig Wilkinson

Inventor： Samuel Sutton ,  Michael Mills ,  Craig Wilkinson

IPC: C23C14/00

CPC classification number: C23C14/0682 ,  C23C14/3407 ,  C23C14/562

Abstract: Method and apparatus for sputter coating an insulated wire with a silicon and metal alloy, to provide the wire with sufficient surface conductivity to protect against build-up of electrostatic charge. A sputtering target of silicon has a metal plate positioned close enough to the sputtering site on the target to permit metal atoms to be dislodged by sputtered silicon, and deposited with the silicon to form an alloy. In the disclosed form of the invention, the wire is insulated with a polyimide material and the metal alloyed with silicon in the sputtered coating is stainless steel.

Abstract translation: 用硅和金属合金溅射涂覆绝缘电线的方法和装置，为电线提供足够的表面电导率，以防止积聚静电电荷。 硅的溅射靶具有与靶上的溅射位置足够接近的金属板，以允许金属原子被溅射硅移走，并沉积硅以形成合金。 在本发明的公开形式中，线用聚酰亚胺材料绝缘，并且在溅射涂层中与硅合金的金属是不锈钢。