公开(公告)号：US20100214815A1

公开(公告)日：2010-08-26

申请号：US12390247

申请日：2009-02-20

申请人： Honkai Tam ,  Sribalan Santhanam ,  Jung-Cheng Yeh ,  Sanjay P. Zambare

发明人： Honkai Tam ,  Sribalan Santhanam ,  Jung-Cheng Yeh ,  Sanjay P. Zambare

IPC分类号： G11C5/06 ,  G11C11/416

CPC分类号： G11C11/419

摘要： In one embodiment, a memory circuit comprises a pair of cross-coupled inverters configured to store a bit of data and a first transistor coupled to a first node of the pair of cross-coupled inverters. A plurality of transistors that form the pair of inverters have a first nominal threshold voltage. The first transistor is coupled to a first bit line, and has a second nominal threshold voltage that is lower than the first nominal threshold voltage. More specifically, in one embodiment, the first transistor is a write transistor and another write transistor having the second nominal threshold voltage is coupled to the other node of the pair of cross-coupled inverters. In an embodiment, a register file comprises a bit storage section comprising at least one pair of cross-coupled inverters, wherein transistors forming the inverters have a first nominal threshold voltage; a write transistor section comprising a first plurality of transistors; and a read transistor section comprising a second plurality of transistors. The first transistors and the second transistors have a second nominal threshold voltage that is lower than the first nominal threshold voltage. The write transistor section is physically located on a first side of the bit storage section, and the read transistor section is physically located on a second side of the bit storage section opposite the first side.

摘要翻译： 在一个实施例中，存储器电路包括被配置为存储数据位的一对交叉耦合的反相器，以及耦合到所述一对交叉耦合的反相器的第一节点的第一晶体管。 形成该对反相器的多个晶体管具有第一标称阈值电压。 第一晶体管耦合到第一位线，并且具有低于第一标称阈值电压的第二标称阈值电压。 更具体地，在一个实施例中，第一晶体管是写晶体管，并且具有第二标称阈值电压的另一写晶体管耦合到该对交叉耦合反相器对中的另一个节点。 在一个实施例中，寄存器文件包括位存储部分，其包括至少一对交叉耦合的反相器，其中形成反相器的晶体管具有第一标称阈值电压; 写入晶体管部分，包括第一多个晶体管; 以及包括第二多个晶体管的读取晶体管部分。 第一晶体管和第二晶体管具有低于第一标称阈值电压的第二标称阈值电压。 写入晶体管部分物理地位于位存储部分的第一侧，并且读取晶体管部分物理地位于与第一侧相对的位存储部分的第二侧。

公开(公告)号：US07990780B2

公开(公告)日：2011-08-02

申请号：US12390247

申请日：2009-02-20

申请人： Honkai Tam ,  Sribalan Santhanam ,  Jung-Cheng Yeh ,  Sanjay P. Zambare

发明人： Honkai Tam ,  Sribalan Santhanam ,  Jung-Cheng Yeh ,  Sanjay P. Zambare

IPC分类号： G11C7/00

CPC分类号： G11C11/419

摘要： A memory circuit may include a pair of cross-coupled inverters configured to store a bit of data and a first transistor coupled to a first node of the pair of cross-coupled inverters. A plurality of transistors that form the pair of inverters have a first nominal threshold voltage. The first transistor is coupled to a first bit line, and has a second nominal threshold voltage that is lower than the first nominal threshold voltage. The first transistor may be a write transistor and another write transistor having the second nominal threshold voltage is coupled to the other node of the pair of cross-coupled inverters. A register file may include a bit storage section that includes at least one pair of the cross-coupled inverters; a write transistor section and a read transistor section having the second nominal threshold voltage.

摘要翻译： 存储器电路可以包括被配置为存储一位数据的一对交叉耦合的反相器，以及耦合到该对交叉耦合的反相器的第一节点的第一晶体管。 形成该对反相器的多个晶体管具有第一标称阈值电压。 第一晶体管耦合到第一位线，并且具有低于第一标称阈值电压的第二标称阈值电压。 第一晶体管可以是写晶体管，并且具有第二标称阈值电压的另一写晶体管耦合到该对交叉耦合反相器对中的另一个节点。 寄存器文件可以包括位存储部分，其包括至少一对交叉耦合的反相器; 写晶体管部分和具有第二标称阈值电压的读晶体管部分。