公开(公告)号：US08283736B2

公开(公告)日：2012-10-09

申请号：US13031208

申请日：2011-02-19

申请人： Shin Won Kang ,  Hyurk Choon Kwon ,  Se Hyuk Yeom

发明人： Shin Won Kang ,  Hyurk Choon Kwon ,  Se Hyuk Yeom

IPC分类号： H01L29/73

CPC分类号： G01N27/4148

摘要： A hydrogen ion sensing device of the present invention includes: a reference electrode; a sensing portion which senses hydrogen ions by contacting an ion aqueous solution; and a plurality of ring-like lateral bipolar junction transistors, each including a lateral collector, an emitter, a vertical collector and a floating gate connected to the reference electrode, with the emitter surrounded by the floating gate and the lateral collector, wherein the plurality of ring-like lateral bipolar junction transistors are formed on a common substrate and are connected in parallel.

摘要翻译： 本发明的氢离子检测装置包括：参考电极; 感测部，其通过使离子水溶液接触而感测氢离子; 以及多个环状横向双极结型晶体管，每个包括侧向集电极，发射极，垂直集电极和连接到参考电极的浮置栅极，发射极被浮置栅极和横向集电极包围，其中多个 的环状横向双极结型晶体管形成在公共基板上并且并联连接。

公开(公告)号：US20110204455A1

公开(公告)日：2011-08-25

申请号：US13031208

申请日：2011-02-19

申请人： SHIN WON KANG ,  Hyurk Choon Kwon ,  Se Hyuk Yeom

发明人： SHIN WON KANG ,  Hyurk Choon Kwon ,  Se Hyuk Yeom

IPC分类号： H01L29/73

CPC分类号： G01N27/4148

摘要： A hydrogen ion sensing device includes: a reference electrode; a sensing portion which senses hydrogen ions by contacting an ion aqueous solution; and a plurality of ring-like lateral bipolar junction transistors, each including a lateral collector, an emitter, a vertical collector and a floating gate connected to the reference electrode, with the emitter surrounded by the floating gate and the lateral collector, wherein the plurality of ring-like lateral bipolar junction transistors are formed on a common substrate and are connected in parallel. With this configuration, an operation point can be adjusted by the bases current with the emitter voltage fixed. In addition, polarities of values of X and Y axes are positive in comparison with a p-channel MOSFET driven with the common collector setting and the device can be operated in a linear region (an active mode) in comparison with ISFET operating in a saturation region. In addition, a sensing area and ion sensitivity can be greatly improved over a single gated lateral BJT and the ion sensitivity can be adjusted by the gate voltage and the base current. Further, the device is capable of operating in a first quadrant even in an n-well, which results in significant reduction of production costs.

摘要翻译： 氢离子感测装置包括：参比电极; 感测部，其通过使离子水溶液接触而感测氢离子; 以及多个环状横向双极结型晶体管，每个包括侧向集电极，发射极，垂直集电极和连接到参考电极的浮置栅极，发射极被浮置栅极和横向集电极包围，其中多个 的环状横向双极结型晶体管形成在公共基板上并且并联连接。 利用这种配置，可以通过固定发射极电压的基极电流来调节操作点。 此外，与使用公共集电极设置驱动的p沟道MOSFET相比，X轴和Y轴的极性都是正的，并且与在饱和状态下工作的ISFET相比，器件可以在线性区域（有源模式）下工作 地区。 此外，单个门控侧面BJT可以大大提高感测面积和离子灵敏度，离子灵敏度可以通过栅极电压和基极电流进行调整。 此外，即使在n阱中，该装置能够在第一象限中操作，这导致生产成本的显着降低。