公开(公告)号：US20240310321A1

公开(公告)日：2024-09-19

申请号：US18575877

申请日：2022-07-01

Applicant: The Research Foundation for The State University of New York

Inventor： Albert TITUS ,  Vaishak PRATHAP ,  Alexander VILLALTA

IPC: G01N27/414 ,  G01N27/416

CPC classification number: G01N27/4148 ,  G01N27/4167

Abstract: A pHI sensor system, Integrated Circuit (IC) chip, and a method are provided. Embodiments of the pH sensor may a first p-channel ion-sensitive transistor (IST)-operational-transconductance-amplifier (PIOTA) and a second PIOTA. Each PIOTA may further include a p-channel IST, an n-channel load transistor having a source and drain, wherein each PIOTA may have a drain-to-source resistance different from each other. Each PIOTA may further include an operational-transconductance-amplifier (OTA). A differential sensor may be connected to the outputs of both PIOTAs, and an output from the differential sensor may indicate a change in pH. Each PIOTA may further have an n-type substrate, a potential of which may be varied to control sensitivity of pH change detection. The NMOS load transistors of one or both of the PIOTAs may be selected from a plurality of NMOS load transistors to enhance sensitivity.

公开(公告)号：US12007356B2

公开(公告)日：2024-06-11

申请号：US16963885

申请日：2018-01-26

Applicant: UNIVERSITÀ DEGLI STUDI DI BARI ALDO MORO

Inventor： Luisa Torsi ,  Gaetano Scamarcio ,  Eleonora Macchia ,  Kyriaki Manoli ,  Gerardo Palazzo ,  Nicola Cioffi ,  Rosaria Anna Picca

IPC: G01N27/414 ,  G01N33/543

CPC classification number: G01N27/4148 ,  G01N27/4145 ,  G01N33/5438

Abstract: A field effect transistor sensor includes: a source-drain channel, a semiconductor layer on said source-drain channel, a first gate electrode arranged above said semiconductor layer, a first well enclosing said source-drain channel, said semiconductor layer and said first gate electrode, the first well being configured to be filled, in use, with a first liquid, particularly a gating electrolyte, a second gate electrode arranged above the first gate electrode and exposed to an interior of the first well. Also disclosed is an array device including an array of field effect transistor sensors according to the above.

公开(公告)号：US11940407B2

公开(公告)日：2024-03-26

申请号：US17044205

申请日：2019-03-19

Applicant: Soitec

Inventor： Bruno Ghyselen

IPC: G01N27/414 ,  B01L3/00 ,  H01L21/306 ,  H01L21/762 ,  H01L29/16 ,  H01L29/161 ,  H01L29/20

CPC classification number: G01N27/4148 ,  B01L3/502715 ,  H01L21/30604 ,  H01L21/76254 ,  B01L2200/12 ,  H01L29/16 ,  H01L29/161 ,  H01L29/20 ,  H01L29/2003

Abstract: A microsensor for detecting ions in a fluid, comprises: a field-effect transistor having a source, a drain, an active region between the source and the drain, and a gate disposed above the active region, an active layer, in which the active region is formed, a dielectric layer positioned beneath the active layer, a support substrate disposed under the dielectric layer and comprising at least one buried cavity located plumb with the gate of the field-effect transistor in order to receive the fluid.

公开(公告)号：US11921082B2

公开(公告)日：2024-03-05

申请号：US17279747

申请日：2019-09-04

Applicant: YOKOGAWA ELECTRIC CORPORATION

Inventor： Kodai Murayama ,  Yoshiaki Tanaka ,  Kenji Oishi ,  Masahiro Hirase ,  Yuzuho Iga

IPC: G01N27/403 ,  A61B5/1486 ,  G01N27/30 ,  G01N27/36 ,  G01N27/414 ,  G01N27/416

CPC classification number: G01N27/4148 ,  A61B5/1486 ,  G01N27/301 ,  G01N27/36 ,  G01N27/4167

Abstract: A measuring device 1 according to the present disclosure measures a state of a solution L. The measuring device 1 includes a measuring unit 10 that outputs a measurement signal associated with the state of the solution L, a protection unit 20 attached to the measuring unit 10, and a controller 40 that obtains the information on the state of the solution L on the basis of a measurement signal output from the measuring unit 10. The measuring unit 10 has a first part P1 in a usable state that contributes to output of the measurement signal by coming into contact with the solution L, and a second part that is isolated from the solution L by the protection unit 20 and is in a standby state for measurement.

公开(公告)号：US20240053295A1

公开(公告)日：2024-02-15

申请号：US18486542

申请日：2023-10-13

Applicant: Kenneth S. Burch ,  Tim van Opijnen ,  Jianmin Gao ,  Narendra Kumar ,  Juan C. Ortiz-Marquez ,  Wenjian Wang ,  Mason Gray

Inventor： Kenneth S. Burch ,  Tim van Opijnen ,  Jianmin Gao ,  Narendra Kumar ,  Juan C. Ortiz-Marquez ,  Wenjian Wang ,  Mason Gray

IPC: G01N27/414

CPC classification number: G01N27/4145 ,  G01N27/4148 ,  G01N27/4146

Abstract: A method and system for label-free detection of pathogenic and antibiotic resistant bacteria is disclosed. The method includes fabricating a G-FET/peptide device having a synthesized peptide probe capable of recognizing and binding to a bacterial target; performing electric-field assisted binding of at least one bacterial cell of the bacterial target to the G-FET/peptide device; and electrically detecting the binding of the at least one bacterial cell to the G-FET/peptide device.

公开(公告)号：US20240027395A1

公开(公告)日：2024-01-25

申请号：US18224971

申请日：2023-07-21

Applicant: Acorn Genetics Inc.

Inventor： Ana Cornell ,  Ryan Abbott ,  Jake Turner

IPC: G01N27/414 ,  C12Q1/6869

CPC classification number: G01N27/4145 ,  C12Q1/6869 ,  G01N27/4146 ,  G01N27/4148

Abstract: A silicon-based chip mounted on a graphene membrane that allows for more efficient DNA translocation measurements and nucleotide probing and analysis includes a Si substrate; a SiO2 layer on top of the Si substrate; a SiNx layer; an electrode; and a graphene membrane on top of a surface of the SiNx layer.

公开(公告)号：US11860120B2

公开(公告)日：2024-01-02

申请号：US17007973

申请日：2020-08-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tung-Tsun Chen ,  Yi-Hsing Hsiao ,  Jui-Cheng Huang ,  Yu-Jie Huang

IPC: G01N27/414 ,  G01N33/569 ,  H01L21/762

CPC classification number: G01N27/4148 ,  G01N27/4145 ,  G01N33/56966 ,  H01L21/76251

Abstract: An IC includes a source region and a drain region in a semiconductor layer. A channel region is between the source region and the drain region. A sensing well is on a back surface of the semiconductor layer and over the channel region. An interconnect structure is on a front surface of the semiconductor layer opposite the back surface of the semiconductor layer. A biosensing film lines the sensing well and contacts a bottom surface of the sensing well that is defined by the semiconductor layer. A coating of selective binding agent is over the biosensing film and configured to bind with a cardiac cell.

公开(公告)号：US20230393092A1

公开(公告)日：2023-12-07

申请号：US17830359

申请日：2022-06-02

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wei Lee ,  Chung-Liang Cheng ,  Pei-Wen Liu ,  Ke-Wei Su ,  Kuan-Lun Cheng

IPC: G01N27/414

CPC classification number: G01N27/4148

Abstract: A semiconductor device includes a substrate, an interconnect, and a sensor. The substrate includes devices therein and has a front side and a rear side opposite to the front side. The interconnect is disposed on the front side and electrically coupled to the devices. The sensor is disposed over the substrate and in the interconnect, and includes a sensing element and a reference element. The sensing element is disposed in a topmost layer of the interconnect and exposed therefrom, where the sensing element is electrically coupled to a first device of the devices through the interconnect. The reference element is disposed in the topmost layer of the interconnect and exposed therefrom, where the reference element is laterally spaced from the sensing element and is electrically coupled to a second device of the devices through the interconnect.

公开(公告)号：US11796537B2

公开(公告)日：2023-10-24

申请号：US16773839

申请日：2020-01-27

Applicant: FemtoDx, Inc.

Inventor： Pritiraj Mohanty

IPC: G01N33/543 ,  G01N27/414 ,  B01L3/00 ,  G01N27/12 ,  B82Y15/00

CPC classification number: G01N33/5438 ,  B01L3/502715 ,  B82Y15/00 ,  G01N27/12 ,  G01N27/4146 ,  G01N27/4148 ,  B01L2300/041 ,  B01L2300/046 ,  B01L2300/0627 ,  B01L2300/0645 ,  B01L2300/12

Abstract: The techniques relate to methods and apparatus for sealed fluid chambers. The device includes a sensor chip comprising a set of sensor elements configured to sense an analyte, and the set of sensor elements comprise an associated set of electrodes extending along the surface of the substrate. The device includes a fluid chamber comprising an edge proximate to the surface of the substrate, the fluid chamber comprising an inner portion in fluid communication with the set of sensor elements, wherein at least one electrodes extends from the inner portion of the chamber across the edge of the chamber and outside of the fluid chamber. The device includes a sealing member between the edge of the fluid chamber and the surface of the substrate such that the sealing member is disposed over at least a portion of the electrode that extends across the edge of the fluid chamber.

公开(公告)号：US11732297B2

公开(公告)日：2023-08-22

申请号：US17738427

申请日：2022-05-06

Applicant: Life Technologies Corporation

Inventor： Jonathan Rothberg ,  Wolfgang Hinz ,  Kim Johnson ,  James Bustillo

IPC: C12Q1/6869 ,  H01L23/00 ,  H01L29/78 ,  G01N27/414 ,  C12Q1/6874 ,  H01L21/306 ,  H01L27/088

CPC classification number: C12Q1/6869 ,  C12Q1/6874 ,  G01N27/414 ,  G01N27/4145 ,  G01N27/4148 ,  H01L21/306 ,  H01L24/18 ,  H01L24/20 ,  H01L24/82 ,  H01L27/088 ,  H01L29/78 ,  H01L2224/04105 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1433 ,  C12Q1/6869 ,  C12Q2565/607 ,  C12Q1/6874 ,  C12Q2565/607 ,  C12Q2565/301 ,  C12Q2533/101 ,  H01L2924/1306 ,  H01L2924/00

Abstract: Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.