公开(公告)号：US4888392A

公开(公告)日：1989-12-19

申请号：US223115

申请日：1988-07-22

申请人： Minoru Matsuda ,  Seiki Itoh ,  Hiroshi Ono

发明人： Minoru Matsuda ,  Seiki Itoh ,  Hiroshi Ono

IPC分类号： C08G75/02 ,  C08G75/00 ,  C08G75/20 ,  C08G75/22 ,  G03F7/039

CPC分类号： C08G75/205 ,  G03F7/039

摘要： A copolymer of sulfur dioxide and polyalkylpolysilylstyrene composed of repeating units of formula I: ##STR1## where R is a lower alkyl group, p is an integer between 2 and 5, q in an integer between 1 and 10 representing the sequence length of polyalkylpolysilylstyrene, and n is a number between 5 and 10,000, and having a number-average molecular weight of 2,000 to 2,000,000. This copolymer is a novel and useful positive resist material which is highly sensitive to light, or electron-beam or X-ray radiation and is of high dry etching resistance.

摘要翻译： 由式I的重复单元构成的二氧化硫和聚烷基聚甲硅烷基苯乙烯的共聚物：其中R是低级烷基，p是2和5之间的整数，q在1和10之间的整数表示序列长度 的聚烷基聚甲硅烷基苯乙烯，n为5〜10,000，数均分子量为2,000〜2000000。 该共聚物是对光或电子束或X射线辐射高度敏感且具有高耐干蚀刻性的新型有用的正性抗蚀剂材料。