公开(公告)号：US5746829A

公开(公告)日：1998-05-05

申请号：US711968

申请日：1996-09-10

申请人： Hideki Matsunaga ,  Hiroshi Yamaguchi ,  Mitsuhiro Tomita ,  Seizou Doi ,  Masahiko Yoshiki ,  Shoji Kozuka ,  Masayuki Onuma

发明人： Hideki Matsunaga ,  Hiroshi Yamaguchi ,  Mitsuhiro Tomita ,  Seizou Doi ,  Masahiko Yoshiki ,  Shoji Kozuka ,  Masayuki Onuma

IPC分类号： G01N1/36 ,  C30B33/00 ,  H01L21/66 ,  C30B35/00

CPC分类号： C30B33/00 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1012

摘要： The invention provides a method for concentrating impurity contained in a semiconductor crystal sample 11 by irradiating repeatedly a specified position of the semiconductor crystal sample 11 with a laser beam having a specified intensity by means of a laser oscillator 13. Then the invention provides a method for analyzing impurity contained in the impurity concentrated area of the semiconductor crystal sample 11 in high sensitivity by means of a specified physical analyzing means. According to demand, a method of the invention concentrates impurity by means of a laser beam after forming an insulating film such as an oxide film and the like transparent to the laser beam on the surface of the semiconductor crystal sample. At the same time, the invention provides a concentrator and an analyzer to be used for these concentrating method and analyzing method.

摘要翻译： 本发明提供一种通过利用激光振荡器13用具有特定强度的激光束反复照射半导体晶体样品11的指定位置来浓缩包含在半导体晶体样品11中的杂质的方法。本发明提供了一种用于 通过特定的物理分析装置以高灵敏度分析半导体晶体样品11的杂质浓缩区域中所含的杂质。 根据需要，本发明的方法在半导体晶体样品的表面上形成对激光束透明的氧化物膜等绝缘膜之后，通过激光束浓缩杂质。 同时，本发明提供了一种用于这些浓缩方法和分析方法的浓缩器和分析器。