公开(公告)号：US20140131694A1

公开(公告)日：2014-05-15

申请号：US14147169

申请日：2014-01-03

申请人： Seminconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Satoshi Seo ,  Hideaki Kuwabara

IPC分类号： H01L27/32

CPC分类号： H01L51/5209 ,  G01J1/4228 ,  H01L25/167 ,  H01L27/3206 ,  H01L27/3211 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L33/0041 ,  H01L51/0096 ,  H01L51/5206 ,  H01L51/5218 ,  H01L51/5221 ,  H01L51/5234 ,  H01L51/524 ,  H01L51/5271 ,  H01L51/529 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/5315

摘要： A FET is formed on a semiconductor substrate, a curved surface having a radius of curvature is formed on an upper end of an insulation, a portion of a first electrode is exposed corresponding to the curved surface to form an inclined surface, and a region defining a luminescent region is subjected to etching to expose the first electrode. Luminescence emitted from an organic chemical compound layer is reflected by the inclined surface of the first electrode to increase a total quantity of luminescence taken out in a certain direction.

摘要翻译： 在半导体基板上形成FET，在绝缘体的上端形成具有曲率半径的曲面，第一电极的一部分相对于曲面露出，形成倾斜面， 对发光区域进行蚀刻以暴露第一电极。 从有机化合物层发出的发光由第一电极的倾斜表面反射，以增加沿某一方向取出的发光总量。

公开(公告)号：US20130248854A1

公开(公告)日：2013-09-26

申请号：US13899736

申请日：2013-05-22

申请人： Seminconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Miyuki Hosoba ,  Suzunosuke Hiraishi

IPC分类号： H01L33/00

CPC分类号： H01L33/0041 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3262 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a semiconductor device comprising a thin film transistor and wirings connected to the thin film transistor, in which the thin film transistor has a channel formation region in an oxide semiconductor layer, and a copper metal is used for at least one of a gate electrode, a source electrode, a drain electrode, a gate wiring, a source wiring, and a drain wiring. The extremely low off current of the transistor with the oxide semiconductor layer contributes to reduction in power consumption of the semiconductor device. Additionally, the use of the copper metal allows the combination of the semiconductor device with a display element to provide a display device with high display quality and negligible defects, which results from the low electrical resistance of the wirings and electrodes formed with the copper metal.

摘要翻译： 公开了一种半导体器件，其包括薄膜晶体管和连接到薄膜晶体管的布线，其中薄膜晶体管在氧化物半导体层中具有沟道形成区域，并且铜金属用于栅电极中的至少一个 源电极，漏电极，栅极布线，源极布线和漏极布线。 具有氧化物半导体层的晶体管的极低的截止电流有助于降低半导体器件的功耗。 此外，铜金属的使用允许半导体器件与显示元件的组合提供具有高显示质量和可忽略的缺陷的显示器件，这是由于由铜金属形成的布线和电极的低电阻引起的。

公开(公告)号：US09105852B2

公开(公告)日：2015-08-11

申请号：US13767007

申请日：2013-02-14

申请人： Seminconductor Energy Laboratory Co., Ltd.

发明人： Hiroshi Kadoma ,  Takahiro Ushikubo ,  Satoshi Seo

IPC分类号： H01L51/00 ,  C07D213/22 ,  H01L51/50

CPC分类号： H01L51/0067 ,  C07D213/22 ,  H01L51/0058 ,  H01L51/0072 ,  H01L51/5072 ,  H01L2251/308

摘要： A light-emitting element having good characteristics can be obtained by using a bipyridine compound having at least one 2,2′-bipyridine structure and at least two anthracene skeletons as light-emitting element materials. In particular, a bipyridine compound in which an anthracene skeleton is bonded to each of the 5-position and the 6-position of 2,2′-bipyridine through an arylene group can be synthesized and a light-emitting element having good characteristics can be obtained in the case where the bipyridine compound is used as a light-emitting element material.

摘要翻译： 通过使用具有至少一个2,2'-联吡啶结构和至少两个蒽骨架的联吡啶化合物作为发光元件材料，可以获得具有良好特性的发光元件。 特别地，可以合成其中蒽骨架通过亚芳基键合到2,2'-联吡啶的5-位和6-位上的联吡啶化合物，具有良好特性的发光元件可以是 在使用联吡啶化合物作为发光元件材料的情况下获得。

公开(公告)号：US08642940B2

公开(公告)日：2014-02-04

申请号：US13919331

申请日：2013-06-17

申请人： Seminconductor Energy Laboratory Co., Ltd.

发明人： Yasuyuki Takahashi ,  Mizuki Sato

IPC分类号： H01L27/00 ,  G09G3/30

CPC分类号： H01L27/3272 ,  G09G3/3233 ,  G09G2300/0408 ,  G09G2300/0842 ,  G09G2320/0242 ,  G09G2320/029 ,  G09G2320/041 ,  G09G2320/043 ,  G09G2330/021 ,  H01L27/12 ,  H01L27/3225 ,  H01L27/3248 ,  H01L29/78633 ,  H01L33/58 ,  H01L51/5203 ,  H01L51/5268 ,  H01L51/5281 ,  H01L51/56 ,  H01L2924/0002 ,  H01L2924/00

摘要： A display device in which light leakage in a monitor element portion is prevented without increasing the number of steps and cost is provided. The display device includes a monitor element for suppressing influence on a light-emitting element due to temperature change and change over time and a TFT for driving the monitor element, in which the TFT for driving the monitor element is provided so as not to overlap the monitor element. Furthermore, the display device includes a first light shielding film and a second light shielding film, in which the first light shielding film is provided so as to overlap a first electrode of the monitor element and the second light shielding film is electrically connect to the first light shielding film through a contact hole formed in an interlayer insulating film. The contact hole is formed so as to surround the outer edge of the first electrode of the monitor element.

摘要翻译： 提供了在不增加步数和成本的情况下防止监视元件部分中的漏光的显示装置。 显示装置包括用于抑制由于温度变化和随时间变化而对发光元件的影响的监视元件，以及用于驱动监视元件的TFT，其中设置用于驱动监视元件的TFT以使其不与 监视元素 此外，显示装置还包括第一遮光膜和第二遮光膜，其中第一遮光膜设置成与监视元件的第一电极重叠，并且第二遮光膜电连接到第一遮光膜 通过在层间绝缘膜中形成的接触孔形成遮光膜。 接触孔形成为围绕监视元件的第一电极的外边缘。