Circuit for reading non-volatile memories
    1.
    发明授权
    Circuit for reading non-volatile memories 有权
    用于读取非易失性存储器的电路

    公开(公告)号:US06480421B2

    公开(公告)日:2002-11-12

    申请号:US10003474

    申请日:2001-10-25

    IPC分类号: G11C1606

    摘要: A circuit for reading a non-volatile memory cell has an output terminal for providing an output current, and a control terminal for receiving a voltage for controlling the output current. The reading circuit includes a feedback circuit which can be connected electrically to the output terminal and to the control terminal to generate the control voltage from a reference signal and from the output current. The feedback circuit also includes a current-amplification circuit having a first terminal for receiving a current-error signal derived from the reference signal and from the output current, and a second terminal for supplying an amplified current.

    摘要翻译: 用于读取非易失性存储单元的电路具有用于提供输出电流的输出端子和用于接收用于控制输出电流的电压的控制端子。 读取电路包括可以与输出端子和控制端子电连接以从参考信号和输出电流产生控制电压的反馈电路。 反馈电路还包括电流放大电路,其具有用于接收从参考信号和输出电流导出的电流 - 误差信号的第一端子和用于提供放大电流的第二端子。