公开(公告)号：US20070010062A1

公开(公告)日：2007-01-11

申请号：US11176725

申请日：2005-07-07

申请人： Freidoon Mehard ,  Shafoeng Yu ,  Joe Tran

发明人： Freidoon Mehard ,  Shafoeng Yu ,  Joe Tran

IPC分类号： H01L21/336

CPC分类号： H01L21/28097 ,  H01L29/4975 ,  H01L29/6656 ,  H01L29/6659

摘要： The present invention provides a method of fabricating a microelectronics device. In one aspect, the method comprises forming a spacer material 160 over gate electrodes 150 that are, in turn, located over a microelectronics substrate 110. The gate electrodes 150 have a doped region 170a located between them. A portion of the spacer material 160 is removed with a chemical/mechanical process using a slurry that is selective to a portion of the spacer material 160. The method further comprises etching a remaining portion of the spacer material 163, 165, 168 to form spacer sidewalls 163, 165, 168 on the gate electrodes 150. The etching exposes a surface of the gate electrodes 150 and leaves a portion of the spacer material 168 over the doped region 170a. Metal is then incorporated into the gate electrodes 150 to form silicided gate electrodes 150.

摘要翻译： 本发明提供一种制造微电子器件的方法。 在一个方面，该方法包括在栅电极150上形成间隔物材料160，栅极150又位于微电子基板110上方。栅电极150具有位于它们之间的掺杂区域170a。 使用对间隔材料160的一部分有选择性的浆料，通过化学/机械方法去除间隔物材料160的一部分。该方法还包括蚀刻间隔物材料163,165,168的剩余部分以形成间隔物 栅极电极150上的侧壁163,165,168。蚀刻暴露栅电极150的表面，并将间隔材料168的一部分留在掺杂区域170a上。 然后将金属结合到栅电极150中以形成硅化栅电极150。

公开(公告)号：US07498264B2

公开(公告)日：2009-03-03

申请号：US11176725

申请日：2005-07-07

申请人： Freidoon Mehard ,  Shafoeng Yu ,  Joe G. Tran

发明人： Freidoon Mehard ,  Shafoeng Yu ,  Joe G. Tran

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/28097 ,  H01L29/4975 ,  H01L29/6656 ,  H01L29/6659

摘要： The present invention provides a method of fabricating a microelectronics device. In one aspect, the method comprises forming a spacer material 160 over gate electrodes 150 that are, in turn, located over a microelectronics substrate 110. The gate electrodes 150 have a doped region 170a located between them. A portion of the spacer material 160 is removed with a chemical/mechanical process using a slurry that is selective to a portion of the spacer material 160. The method further comprises etching a remaining portion of the spacer material 163, 165, 168 to form spacer sidewalls 163, 165, 168 on the gate electrodes 150. The etching exposes a surface of the gate electrodes 150 and leaves a portion of the spacer material 168 over the doped region 170a. Metal is then incorporated into the gate electrodes 150 to form silicided gate electrodes 150.

摘要翻译： 本发明提供一种制造微电子器件的方法。 在一个方面，该方法包括在栅电极150上形成间隔物材料160，栅极150又位于微电子基板110上方。栅电极150具有位于它们之间的掺杂区域170a。 使用对间隔材料160的一部分有选择性的浆料，通过化学/机械方法去除间隔物材料160的一部分。该方法还包括蚀刻间隔物材料163,165,168的剩余部分以形成间隔物 在栅极电极150上的侧壁163,165,168。蚀刻暴露出栅电极150的表面，并将间隔材料168的一部分留在掺杂区域170a上。 然后将金属结合到栅电极150中以形成硅化栅电极150。