公开(公告)号：US06818917B2

公开(公告)日：2004-11-16

申请号：US10385631

申请日：2003-03-12

申请人： Chieh-Hsiung Kuan ,  Hsin-Cheng Chen ,  Chun-Chi Chen ,  Sheng-Di Lin ,  Jen-Hsiang Lu

发明人： Chieh-Hsiung Kuan ,  Hsin-Cheng Chen ,  Chun-Chi Chen ,  Sheng-Di Lin ,  Jen-Hsiang Lu

IPC分类号： H01L29205

CPC分类号： B82Y20/00 ,  H01L31/035236 ,  H01L31/101

摘要： An infrared photodetector structure with voltage-tunable and -switchable photoresponses constructed of superlattices and blocking barriers. The photoresponses of the double-superlattice structure are also insensitive to the operating temperature changes. By using GaAs/AlxGa1-xAs system, the feasibility of this idea is verified. In the embodiment, the photoresponses can be switched between 6˜8.5 and 7.5˜12 m by the bias polarity and are also tunable by the bias magnitude in each detection wavelength range. In addition, the photoresponses are insensitive to operating temperatures ranging from 20 to 80 K. For the SLIP with few periods, the responsivity may be higher than the one with many periods and the operational temperature is higher. These results show the invention can be useful in the design of multicolor imaging systems. This invention is not only applicable for wavelengths comparable with the embodiment, but can also be applied to the detection of radiation in the range from visible to extreme far infrared.

摘要翻译： 具有由超晶格和阻挡屏障构成的具有电压可调和可开关光响应的红外光电探测器结构。 双超晶格结构的光响应也对工作温度变化不敏感。 通过使用GaAs / AlxGa1-xAs系统，验证了这一想法的可行性。 在实施例中，光响应可以通过偏置极性在6〜8.5和7.5〜12μm之间切换，并且也可以通过每个检测波长范围内的偏置量值来调节。 此外，光响应对20至80K的工作温度不敏感。对于SLIP几个周期，响应度可能高于具有多个周期的响应，并且操作温度较高。 这些结果表明本发明可用于多色成像系统的设计。 本发明不仅适用于与实施例相当的波长，而且还可以应用于从可见光到远红外线的范围内的辐射检测。