摘要:
A memory device comprises a memory cell array, a first and a second pre-charging switch circuits, a selecting circuit, an auxiliary memory cell array, a dynamic voltage controller and a sense amplifier. The auxiliary memory cell array comprises an auxiliary read bit line and a plurality of memory cells arranged in a column and electrically connected to the auxiliary read bit line. The second pre-charging switch circuit determines whether or not to supply a reference voltage to each of the aforementioned memory cells according to a pre-charging control signal. The dynamic voltage controller determines whether or not to supply a voltage to the auxiliary read bit line according to the voltage level of the output signal of the selecting circuit. The sense amplifier compares the voltage levels of the output signal of the selecting circuit and the voltage on the auxiliary read bit line to output a sensing result accordingly.
摘要:
Present invention teaches the construction of a modular wood panels wherein a back plate, formed by two parallel strips and some rectangular pieces fitted between the two strips, serves to allow a decorative layer to be easily attached, with top-bottom and left-right interlocking mechanism; the use of the back plate materials allows low cost materials because a lot of scrap materials can be used, while contributing to better climate stability, in addition to ease of installation.
摘要:
A voltage regulator circuit includes a plurality of transistors and a control circuit. Each transistor has two source/drain terminal and a gate terminal. One source/drain terminal of each transistor is electrically coupled to a source voltage, and the other source/drain terminals of the transistors are electrically coupled to each other and corporately referred to as an output terminal of the voltage regulator circuit. The control circuit is electrically coupled to the gate terminals of the transistors and configured to determine the number of the transistors to be turned on according to the difference between the voltage at the output terminal and a predetermined reference voltage.
摘要:
A temperature sensor includes a signal delaying apparatus, a comparison apparatus, a multiplier and a counting apparatus. The signal delaying apparatus is configured to receive a step signal, perform a phase delay operation on the received step signal according to a temperature degree, and thereby forming a first output signal. The comparison apparatus is configured to receive the first output signal and the step signal, and accordingly output a second output signal. The multiplier is configured to receive the second output signal and a clock signal, and accordingly output a third output signal. The counting apparatus is configured to receive the third output signal, count the number of pulses of the third output signal, and generate a digital code accordingly.
摘要:
A sense amplifier and a method for determining the values of the voltages on a bit-line pair are provided. The sense amplifier comprises a first delay chain and a second delay chain. The first delay chain is electrically connected to a bit line and configured for receiving a clock signal and a first voltage on the bit line, so as to delay the clock signal according to the first voltage and to generate a first delay signal accordingly. The second delay chain is electrically connected to a complementary bit line and configured for receiving the clock signal and a second voltage on the complementary bit line, so as to delay the clock signal according to the second voltage and to generate a second delay signal accordingly.
摘要:
A sense-amplifier circuit of a memory, which includes a sense-amplifier unit, a first switch unit and a second switch unit. The sense-amplifier unit is constituted by a plurality of transistor switches and having a first, a second, a third and a fourth connection terminal. The first switch unit is configured to be parallel coupled between the first and second connection terminals of the sense-amplifier unit. The second switch unit is configured to be parallel coupled between the third and fourth connection terminals of the sense-amplifier unit. The first and second switch units each are constituted by a plurality of transistor switches coupled in parallel and are configured to control each of the parallel-coupled transistor switches on or off in the first and second switch units so as to calibrate a sensing range of the sense-amplifier unit. A calibrating method for a sense-amplifier circuit of a memory is also provided.
摘要:
A sense amplifier and a method for determining the values of the voltages on a bit-line pair are provided. The sense amplifier comprises a first delay chain and a second delay chain. The first delay chain is electrically connected to a bit line and configured for receiving a clock signal and a first voltage on the bit line, so as to delay the clock signal according to the first voltage and to generate a first delay signal accordingly. The second delay chain is electrically connected to a complementary bit line and configured for receiving the clock signal and a second voltage on the complementary bit line, so as to delay the clock signal according to the second voltage and to generate a second delay signal accordingly.
摘要:
A voltage regulator circuit includes a plurality of transistors and a control circuit. Each transistor has two source/drain terminal and a gate terminal. One source/drain terminal of each transistor is electrically coupled to a source voltage, and the other source/drain terminals of the transistors are electrically coupled to each other and corporately referred to as an output terminal of the voltage regulator circuit. The control circuit is electrically coupled to the gate terminals of the transistors and configured to determine the number of the transistors to be turned on according to the difference between the voltage at the output terminal and a predetermined reference voltage.
摘要:
A sense-amplifier circuit of a memory, which includes a sense-amplifier unit, a first switch unit and a second switch unit. The sense-amplifier unit is constituted by a plurality of transistor switches and having a first, a second, a third and a fourth connection terminal. The first switch unit is configured to be parallel coupled between the first and second connection terminals of the sense-amplifier unit. The second switch unit is configured to be parallel coupled between the third and fourth connection terminals of the sense-amplifier unit. The first and second switch units each are constituted by a plurality of transistor switches coupled in parallel and are configured to control each of the parallel-coupled transistor switches on or off in the first and second switch units so as to calibrate a sensing range of the sense-amplifier unit. A calibrating method for a sense-amplifier circuit of a memory is also provided.
摘要:
A fully on-chip temperature, process, and voltage sensor includes a voltage sensor, a process sensor and a temperature sensor. The temperature sensor includes a bias current generator, a ring oscillator, a fixed pulse generator, an AND gate, and a first counter. The bias current generator generates an output current related to temperature according to the operating voltage of chip. The ring oscillator generates an oscillation signal according to the output current. The fixed pulse generator generates a fixed pulse signal. The AND gate is connected to the ring oscillator and the fixed pulse generator for performing a logic AND operation on the oscillation signal and the fixed pulse signal, and generating a temperature sensor signal.