公开(公告)号：US06869477B2

公开(公告)日：2005-03-22

申请号：US10204654

申请日：2001-02-20

申请人： Hiroyo Haga ,  Makoto Kojima ,  Shigemi Saga

发明人： Hiroyo Haga ,  Makoto Kojima ,  Shigemi Saga

IPC分类号： C30B15/00 ,  C30B15/22

CPC分类号： C30B29/06 ,  C30B15/22

摘要： A process for preparing a single crystal silicon in accordance with the Czochralski method, is provided. More specifically, by quickly reducing the pull rate at least once during the growth of the neck portion of the single crystal ingot, in order to change the melt/solid interface shape from a concave to a convex shape, the present process enables zero dislocation growth to be achieved in a large diameter neck within a comparably short neck length, such that large diameter ingots of substantial weight can be produced safely and at a high throughput.

摘要翻译： 提供了一种根据Czochralski法制备单晶硅的方法。 更具体地，通过在单晶锭的颈部生长期间快速降低拉伸速率至少一次，为了将熔体/固体界面形状从凹形变为凸形，本方法使零位错生长 在相当短的颈部长度的大直径颈部中实现，使得可以安全地且以高产量生产重量大的大直径锭。