摘要:
A process for preparing a single crystal silicon in accordance with the Czochralski method, is provided. More specifically, by quickly reducing the pull rate at least once during the growth of the neck portion of the single crystal ingot, in order to change the melt/solid interface shape from a concave to a convex shape, the present process enables zero dislocation growth to be achieved in a large diameter neck within a comparably short neck length, such that large diameter ingots of substantial weight can be produced safely and at a high throughput.
摘要:
A valve case (11) includes a plurality of ports (P1, P2, P3, . . . ). A valve body (50) rotates in the valve case (11) and slide on openings of predetermined ones of the ports (P1, P2, P3, . . . ) to switch a communication state among the ports (P1, P2, P3, . . . ). A motor (31) rotates the valve body (50). A controller (500) controls a rotation speed (ω) of the motor (31) in accordance with a differential pressure (ΔP) between internal and external pressures of the valve body (50).
摘要:
A movable valve element is provided so as to rotate about a predetermined shaft center. A first valve seat and a second valve seat are respectively arranged apart from the movable valve element with predetermined clearances on both sides of the movable valve element in a direction along the shaft center. A first sealing member is arranged around a communication path so as to seal a space inside the communication path from a space defined by the clearance on a side close to the first valve seat. A second sealing member is arranged around the communication path so as to seal the space inside the communication path from a space defined by the clearance on a side close to the second valve seat.
摘要:
A movable valve element is provided so as to rotate about a predetermined shaft center. A first valve seat and a second valve seat are respectively arranged apart from the movable valve element with predetermined clearances on both sides of the movable valve element in a direction along the shaft center. A first sealing member is arranged around a communication path so as to seal a space inside the communication path from a space defined by the clearance on a side close to the first valve seat. A second sealing member is arranged around the communication path so as to seal the space inside the communication path from a space defined by the clearance on a side close to the second valve seat.
摘要:
A conductive film of thickness of from 3 nm to 50 nm made from a metal or ally formed on a substrate, wherein the ratio of density thereof to bulk density of the metal or alloy is from 0.2 to 0.5, and the ratio of resistivity thereof to bulk resistivity of the metal or alloy is from 100 to 100000.
摘要:
A refrigerant flow dividing apparatus of a heat exchanger for refrigerating apparatus is provided with a minimal number of refrigerant flow regulating valves and suppresses increase in the size and costs of the apparatus. Refrigerant is supplied to paths of the heat exchanger for refrigerating apparatus including a heat exchanger for reheat dehumidification via a refrigerant flow divider provided with paths. Each path of the refrigerant flow divider is provided with a refrigerant flow regulating valve, and a predetermined one of the refrigerant flow regulating valves of the paths also functions as a reheat dehumidification valve.
摘要:
Provided is a manufacturing method of forming an airtight container including an electron beam irradiation process for irradiating an electron beam to a non-evaporable type getter that has not been activated so as not to activate the non-evaporable type getter, and a sealing process for sealing a seal portion after the electron beam irradiation process.
摘要:
Based on a result of detection taken by the high-low pressure difference detection means (93, 97) for detecting a difference between a high and a low pressure of a refrigeration cycle, an estimate of whether there is leakage of refrigerant in an expansion valve (52) is made. Based on the result detected by the high-low pressure difference detection means (93, 97), a control means (81) sets a reference temperature (T3) to a value corresponding to the degree of refrigerant leakage in the expansion valve (52).
摘要:
A conductive film of thickness of from 3 nm to 50 nm made from a metal or ally formed on a substrate, wherein the ratio of density thereof to bulk density of the metal or alloy is from 0.2 to 0.5, and the ratio of resistivity thereof to bulk resistivity of the metal or alloy is from 100 to 100000.
摘要:
A plurality of memory cells are connected between two adjacent sub-bit lines. A row decoder 3 selects a word line connected to a memory cell to be read. A selection line selection circuit 2 and a column selection circuit 5 include first and second selection portions that perform selection operations simultaneously and independently. The first selection portion selects a first pair of main bit lines and selection lines in order to select the memory cell to be read. The second selection portion selects a second pair of main bit lines that is different from the first pair of main bit lines and selection lines for selecting a sector different from that for the memory cell to be read in order to select a line to be used for reading a reference voltage.