公开(公告)号：US4990999A

公开(公告)日：1991-02-05

申请号：US416494

申请日：1989-10-03

申请人： Motohiro Oishi ,  Kunio Matsudaira ,  Keiji Fukumura ,  Shigemi Sasada

发明人： Motohiro Oishi ,  Kunio Matsudaira ,  Keiji Fukumura ,  Shigemi Sasada

IPC分类号： H01L21/3205 ,  H01L21/8246 ,  H01L23/52 ,  H01L27/108 ,  H01L27/112

CPC分类号： H01L27/10805

摘要： A semiconductor memory device in which MOS transistors are used. The device has diffusion lines and polysilicon lines formed on a semiconductor substrate, first and second insulating films covering the diffusion lines and the polysilicon lines, respectively. The diffusion lines extend at intervals and parallel with each other, and constitute bit lines of the memory device. The polysilicon lines extend at intervals, intersect the diffusion lines, and constitute word lines of the memory device. Metal wiring lines are formed on the second insulating film are each positioned over every other diffusion line in such a manner as to extend along the corresponding diffusion line, each metal wiring line being electrically connected to the corresponding diffusion line through a contact hole. Two regions of two adjacent diffusion lines that are underneath the two intersections of these two adjacent diffusion lines and one polysilicon line constitute the source region and the drain region of one MOS transistor, and a portion of the polysilicon line which is between the source region and the drain region constitutes the gate of the MOS transistor. Thus, MOS transistors of the device can be disposed with an increased density, without involving any reduction in the operation speed of the device.

摘要翻译： 使用MOS晶体管的半导体存储器件。 该器件具有形成在半导体衬底上的扩散线和多晶硅线，分别覆盖扩散线和多晶硅线的第一和第二绝缘膜。 扩散线以间隔延伸并且彼此平行，并且构成存储器件的位线。 多晶硅线以间隔延伸，与扩散线相交，并构成存储器件的字线。 形成在第二绝缘膜上的金属布线各自沿着相应的扩散线延伸设置在每隔一个扩散线上，每条金属布线通过接触孔与相应的扩散线电连接。 在两个相邻扩散线的两个交点之下的两个相邻扩散线的两个区域和一个多晶硅线构成一个MOS晶体管的源极区域和漏极区域，以及位于源极区域和 漏区构成MOS晶体管的栅极。 因此，器件的MOS晶体管可以以更高的密度布置，而不会降低器件的工作速度。