公开(公告)号：US09397242B2

公开(公告)日：2016-07-19

申请号：US14006357

申请日：2012-03-28

申请人： Yasushi Taniguchi ,  Shigeru Sankawa, Sr. ,  Kouji Arai ,  Hiroshi Tanabe ,  Ichiro Nakayama ,  Naoshi Yamaguchi

发明人： Yasushi Taniguchi ,  Shigeru Sankawa, Sr. ,  Kouji Arai ,  Hiroshi Tanabe ,  Ichiro Nakayama ,  Naoshi Yamaguchi

IPC分类号： H01L31/0236 ,  H01L21/306 ,  H01L29/04

CPC分类号： H01L31/02363 ,  H01L21/30604 ,  H01L29/045 ,  Y02E10/50

摘要： The present invention addresses the problem of providing a novel silicon substrate having a textured surface by dry-etching the surface of a silicon substrate having (111) orientation and thereby forming a texture thereon. The present invention provides a silicon substrate having (111) orientation, said silicon substrate having a textured surface that includes multiple protrusions which each comprise three slant faces and have heights of 100 to 8000 nm. This process for producing a silicon substrate includes: a step of preparing a silicon substrate having (111) orientation; and a step of blowing an etching gas onto the surface of the silicon substrate, said etching gas containing one or more gases selected from the group consisting of ClF3, XeF2, BrF3, BrF5 and NF3.

摘要翻译： 本发明解决了通过干法蚀刻具有（111）取向的硅衬底的表面从而在其上形成纹理来提供具有纹理表面的新型硅衬底的问题。 本发明提供具有（111）取向的硅衬底，所述硅衬底具有纹理化表面，其包括多个突起，每个突出部包括三个倾斜面并且具有100至8000nm的高度。 该制造硅衬底的工艺包括：制备具有（111）取向的硅衬底的步骤; 以及将蚀刻气体吹送到硅衬底的表面上的步骤，所述蚀刻气体含有选自ClF 3，XeF 2，BrF 3，BrF 5和NF 3中的一种或多种气体。

公开(公告)号：US20140020750A1

公开(公告)日：2014-01-23

申请号：US14006357

申请日：2012-03-28

申请人： Yasushi Taniguchi ,  Shigeru Sankawa ,  Kouji Arai ,  Hiroshi Tanabe ,  Ichiro Nakayama ,  Naoshi Yamaguchi

发明人： Yasushi Taniguchi ,  Shigeru Sankawa ,  Kouji Arai ,  Hiroshi Tanabe ,  Ichiro Nakayama ,  Naoshi Yamaguchi

IPC分类号： H01L31/0236 ,  H01L21/306 ,  H01L29/04

CPC分类号： H01L31/02363 ,  H01L21/30604 ,  H01L29/045 ,  Y02E10/50

摘要： The present invention addresses the problem of providing a novel silicon substrate having a textured surface by dry-etching the surface of a silicon substrate having (111) orientation and thereby forming a texture thereon. The present invention provides a silicon substrate having (111) orientation, said silicon substrate having a textured surface that includes multiple protrusions which each comprise three slant faces and have heights of 100 to 8000 nm. This process for producing a silicon substrate includes: a step of preparing a silicon substrate having (111) orientation; and a step of blowing an etching gas onto the surface of the silicon substrate, said etching gas containing one or more gases selected from the group consisting of ClF3, XeF2, BrF3, BrF5 and NF3.

摘要翻译： 本发明解决了通过干法蚀刻具有（111）取向的硅衬底的表面从而在其上形成纹理来提供具有纹理表面的新型硅衬底的问题。 本发明提供具有（111）取向的硅衬底，所述硅衬底具有纹理化表面，其包括多个突起，每个突出部包括三个倾斜面并且具有100至8000nm的高度。 该制造硅衬底的工艺包括：制备具有（111）取向的硅衬底的步骤; 以及将蚀刻气体吹送到硅衬底的表面上的步骤，所述蚀刻气体含有选自ClF 3，XeF 2，BrF 3，BrF 5和NF 3中的一种或多种气体。