公开(公告)号：US20060096706A1

公开(公告)日：2006-05-11

申请号：US11315316

申请日：2005-12-23

申请人： Naoyuki Kofuji ,  Masahito Mori ,  Ken'etsu Yokogawa ,  Naoshi Itabashi ,  Kazunori Tsujimoto ,  Shin'ichi Tachi

发明人： Naoyuki Kofuji ,  Masahito Mori ,  Ken'etsu Yokogawa ,  Naoshi Itabashi ,  Kazunori Tsujimoto ,  Shin'ichi Tachi

IPC分类号： H01L21/306 ,  C23F1/00

CPC分类号： H01L21/67069 ,  H01J37/32082 ,  H01L21/32136 ,  H01L21/32137

摘要： The processing with a low gate rate of destruction and high anisotropy is achieved in dry etching. Plasma is generated by ECR resonance of electromagnetic wave which arose by supplying Ultra High Frequency electric power in microstripline 4 arranged on the atmosphere side of a dielectric 2, which separates a vacuum inside and an outside and magnetic field. A conducting layer is etched by this plasma, which is stable and uniform plasma.

摘要翻译： 在干蚀刻中实现了具有低栅极破坏率和高各向异性的处理。 等离子体是通过电磁波的ECR共振产生的，其通过在布置在电介质2的大气层上的微阵列4中提供超高频电力而产生，该电介质2将真空内部和外部以及磁场分离。 通过该等离子体蚀刻导电层，其是稳定且均匀的等离子体。