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1.发明申请公开(公告)号：US20060096706A1
公开(公告)日：2006-05-11
申请号：US11315316
申请日：2005-12-23
申请人： Naoyuki Kofuji , Masahito Mori , Ken'etsu Yokogawa , Naoshi Itabashi , Kazunori Tsujimoto , Shin'ichi Tachi
发明人： Naoyuki Kofuji , Masahito Mori , Ken'etsu Yokogawa , Naoshi Itabashi , Kazunori Tsujimoto , Shin'ichi Tachi
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01L21/67069 , H01J37/32082 , H01L21/32136 , H01L21/32137
摘要： The processing with a low gate rate of destruction and high anisotropy is achieved in dry etching. Plasma is generated by ECR resonance of electromagnetic wave which arose by supplying Ultra High Frequency electric power in microstripline 4 arranged on the atmosphere side of a dielectric 2, which separates a vacuum inside and an outside and magnetic field. A conducting layer is etched by this plasma, which is stable and uniform plasma.
摘要翻译： 在干蚀刻中实现了具有低栅极破坏率和高各向异性的处理。 等离子体是通过电磁波的ECR共振产生的，其通过在布置在电介质2的大气层上的微阵列4中提供超高频电力而产生，该电介质2将真空内部和外部以及磁场分离。 通过该等离子体蚀刻导电层，其是稳定且均匀的等离子体。
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公开(公告)号：US5891252A
公开(公告)日：1999-04-06
申请号：US766818
申请日：1996-12-13
申请人： Ken'etsu Yokogawa , Tetsuo Ono , Kazunori Tsujimoto , Naoshi Itabashi , Masahito Mori , Shinichi Tachi , Keizo Suzuki
发明人： Ken'etsu Yokogawa , Tetsuo Ono , Kazunori Tsujimoto , Naoshi Itabashi , Masahito Mori , Shinichi Tachi , Keizo Suzuki
CPC分类号： H01J37/3222 , H01J37/32082 , H01J37/32678 , H01J2237/3341
摘要： A plasma processing apparatus in which power consumption is reduced, which can generate uniform plasma in a large range and in which minute processing in high etching selectivity and in high aspect ratio is enabled is disclosed. High density plasma is generated in a vacuum vessel housing a processed sample utilizing an electron cyclotron resonance phenomenon caused by an electromagnetic wave in an ultra-high frequency band and a magnetic field and the surface of the processed sample is etched using this plasma. An electromagnetic wave in an ultra-high frequency band for generating plasma is radiated from a planar conductive plate consisting of graphite or silicon which is arranged opposite to the surface of the processed sample into space inside the vacuum vessel. High density plasma in the low degree of dissociation can be generated by using an electromagnetic wave in an ultra-high frequency band and as a result, the controllability of etching reaction can be enhanced. Further, a radical effective in etching can be increased by reaction between the surface of a planar conductive plate for radiating an electromagnetic wave and plasma.
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公开(公告)号：US6033481A
公开(公告)日：2000-03-07
申请号：US225971
申请日：1999-01-06
申请人： Ken'etsu Yokogawa , Tetsuo Ono , Kazunori Tsujimoto , Naoshi Itabashi , Masahito Mori , Shinichi Tachi , Keizo Suzuki
发明人： Ken'etsu Yokogawa , Tetsuo Ono , Kazunori Tsujimoto , Naoshi Itabashi , Masahito Mori , Shinichi Tachi , Keizo Suzuki
CPC分类号： H01J37/3222 , H01J37/32082 , H01J37/32678 , H01J2237/3341
摘要： A plasma processing apparatus in which power consumption is reduced, which can generate uniform plasma in a large range and in which minute processing in high etching selectivity and in high aspect ratio is enabled is disclosed. High density plasma is generated in a vacuum vessel housing a processed sample utilizing an electron cyclotron resonance phenomenon caused by an electromagnetic wave in an ultra-high frequency band and a magnetic field and the surface of the processed sample is etched using this plasma. An electromagnetic wave in an ultra-high frequency band for generating plasma is radiated from a planar conductive plate consisting of graphite or silicon which is arranged opposite to the surface of the processed sample into space inside the vacuum vessel. High density plasma in the low degree of dissociation can be generated by using an electromagnetic wave in an ultra-high frequency band and as a result, the controllability of etching reaction can be enhanced. Further, a radical effective in etching can be increased by reaction between the surface of a planar conductive plate for radiating an electromagnetic wave and plasma.
摘要翻译： 公开了能够在大范围内产生均匀的等离子体并能够实现高蚀刻选择性和高纵横比的微小加工的功耗降低的等离子体处理装置。 利用由超高频带和磁场中的电磁波引起的电子回旋共振现象，在容纳加工样品的真空容器中产生高密度等离子体，并且使用该等离子体蚀刻处理样品的表面。 用于产生等离子体的超高频带中的电磁波从由石墨或硅组成的平面导电板辐射，该导电板与被处理样品的表面相对地设置在真空容器内部的空间中。 通过在超高频带中使用电磁波可以产生低解离度的高密度等离子体，结果可以提高蚀刻反应的可控性。 此外，通过用于辐射电磁波的平面导电板的表面与等离子体之间的反应可以增加蚀刻中有效的自由基。
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公开(公告)号：US20130087285A1
公开(公告)日：2013-04-11
申请号：US13592129
申请日：2012-08-22
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/3211 , H01J37/32192 , H01J37/32302 , H01J37/32449 , H01J2237/006 , H01J2237/3341
摘要： A plasma etching apparatus of an electrodeless system can uniformize a radical density, and improve the uniformity of etching. The plasma etching apparatus of the electrodeless system includes a decompression chamber, a gas supply mechanism, a dielectric window, a plasma generation unit, a stage on which a sample is placed, and a first RF power supply connected to the stage. The plasma etching apparatus further includes a gas introduction mechanism for supplying a second gas, and a second RF power supply for inputting a RF power that allows radicals to be generated in an outer periphery of the sample.
摘要翻译： 无电极系统的等离子体蚀刻装置可以使自由基密度均匀化，并提高蚀刻的均匀性。 无电极系统的等离子体蚀刻装置包括减压室，气体供给机构，电介质窗，等离子体产生单元，放置样品的台和连接到载物台的第一RF电源。 等离子体蚀刻装置还包括用于供应第二气体的气体引入机构和用于输入允许在样品的外周产生自由基的RF功率的第二RF电源。
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公开(公告)号：US09490104B2
公开(公告)日：2016-11-08
申请号：US13550638
申请日：2012-07-17
IPC分类号： B23K9/00 , H01J37/32 , H01L21/324 , H01L21/67
CPC分类号： H01J37/32091 , H01J37/32522 , H01L21/324 , H01L21/67115
摘要： Provided is a heat treatment apparatus that is high in thermal efficiency and can reduce surface roughness of a substrate to be treated even when a specimen is heated at 1200° C. or higher.The heat treatment apparatus heating the specimen includes a heating plate heated by plasma formed in an area of a gap to heat the specimen.
摘要翻译： 加热试样的热处理装置包括由等离子体加热的加热板，所述等离子体形成在间隙的区域中以加热试样。
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公开(公告)号：US07771564B2
公开(公告)日：2010-08-10
申请号：US11512081
申请日：2006-08-30
IPC分类号： H01L21/3065 , C23C16/00 , C23C16/458 , C23C16/46
CPC分类号： H01L21/67109 , H01J37/32431 , H01J2237/2001
摘要： In a plasma processing apparatus equipped with a vacuum vessel and a sample table which is arranged within the vacuum vessel and has a sample mounting plane where a sample is mounted on an upper portion, for forming plasma within the processing chamber so as to process a sample mounted on the sample mounting plane, the plasma processing apparatus includes: a space arranged inside the sample table, into which a coolant is supplied; a ceiling plane of the space arranged opposite to the sample mounting plane, with which the coolant collides from plural portions; and an exhaust port via which the coolant which has collided with the ceiling plane to be evaporated is exhausted from the sample table.
摘要翻译： 在配备有真空容器和样品台的等离子体处理装置中，其设置在真空容器内并具有样品安装面，样品安装在上部，用于在处理室内形成等离子体，以便处理样品 安装在样品安装平面上的等离子体处理设备包括：布置在样品台内部的空间，供应冷却剂的空间; 与样品安装平面相对的空间的顶板，冷却剂与多个部分碰撞; 以及与待蒸发的顶板相撞的冷却剂通过该排气口从样品台排出。
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公开(公告)号：US20060157449A1
公开(公告)日：2006-07-20
申请号：US11348300
申请日：2006-02-07
CPC分类号： H01J37/32522 , H01J37/32192 , H01J37/32678 , H01L21/31116
摘要： In an oxide film etching process, a plasma having a suitable ratio of CF3, CF2, CF, and F is necessary, and there is a problem in that the etching characteristic fluctuates in accordance with a temperature fluctuation of the etching chamber. Using a UHF type ECR plasma etching apparatus having a low electron temperature, a suitable dissociation can be obtained, and by maintaining the temperature of a side wall of the etching chamber in a range from 10° C. and 120° C., a stable etching characteristic can be obtained. Since oxide film etching using a low electron temperature and a high density plasma can be obtained, an etching result having a superior characteristic can be obtained, and, also, since the side wall temperature adjustment range is low, a simplified apparatus structure and a heat resistant performance countermeasure can be obtained easily.
摘要翻译： 在氧化膜蚀刻工艺中，需要具有CF 3 N，CF 2，CF和F的合适比例的等离子体，并且存在的问题是， 特性根据蚀刻室的温度波动而波动。 使用具有低电子温度的UHF型ECR等离子体蚀刻装置，可以获得适当的解离，并且通过将蚀刻室的侧壁的温度保持在10℃和120℃的范围内，稳定的 可以获得蚀刻特性。 由于可以获得使用低电子温度和高密度等离子体的氧化膜蚀刻，因此可以获得具有优异特性的蚀刻结果，并且由于侧壁温度调节范围低，因此简化的装置结构和热 可以容易地获得耐性性能对策。
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公开(公告)号：US08569647B2
公开(公告)日：2013-10-29
申请号：US13185622
申请日：2011-07-19
CPC分类号： H01L21/3247 , C23C16/325 , C23C16/46 , C23C16/5096 , H01J37/32091 , H01J37/32724 , H01J37/32935 , H01L21/67069 , H01L21/6719 , H01L29/1608
摘要： Provided is a heat treatment apparatus in which a heat treatment apparatus in which the thermal efficiency is high, the maintenance expense is low, the throughput is high, the surface roughness of a sample can be reduced, and the discharge uniformity is excellent, although the heat treatment is performed at 1200 ° C. or more.A heat treatment apparatus includes: parallel planar electrodes; a radio-frequency power supply generating plasma by applying radio-frequency power between the parallel planar electrodes; a temperature measuring section measuring the temperature of a heated sample; and a control unit controlling an output of the radio-frequency power supply, wherein at least one of the parallel planar electrodes has a space where the heated sample is installed, therein, and heats the sample in the electrode by the plasma generated between the parallel planar electrodes.
摘要翻译： 提供一种热处理装置，其中热效率高，维护费用低，生产量高，样品表面粗糙度可以降低，并且放电均匀性优异的热处理装置，尽管 在1200℃以上进行热处理。 热处理装置包括：平行平面电极; 射频电源，通过在平行平面电极之间施加射频电力而产生等离子体; 测量加热样品的温度的温度测量部分; 以及控制单元，其控制所述射频电源的输出，其中，所述平行平面电极中的至少一个具有其中安装了所述被加热样品的空间，并且通过在所述平行电极之间产生的等离子体来加热所述电极中的所述样品 平面电极。
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9.发明申请公开(公告)号：US20080023448A1
公开(公告)日：2008-01-31
申请号：US11512118
申请日：2006-08-30
IPC分类号： B23K9/00
CPC分类号： H01L21/67248 , H01J2237/2001 , H01L21/67109
摘要： A plasma processing apparatus is provided which processes a sample held on a sample table arranged in a process chamber in a vacuum container by using a plasma formed in the process chamber. The plasma processing apparatus comprises: paths arranged in the sample table in which a coolant is supplied and vaporized as it flows; a refrigeration cycle having the sample table, a compressor, a condenser and an expansion valve connected in that order and having the coolant circulate therein; coolant passages to cause the coolant that has passed through the expansion valve to branch and then merge with a coolant returning from the paths in the sample table toward the compressor; and a regulator to adjust an amount of coolant passing through the paths in the sample table and circulating in the refrigeration cycle and an amount of coolant branching and flowing through the coolant passages.
摘要翻译： 提供一种等离子体处理装置，其通过使用在处理室中形成的等离子体处理在真空容器中布置在处理室中的样品台上保持的样品。 等离子体处理装置包括：布置在样品台中的通道，其中供应冷却剂并在其流动时蒸发; 具有样品台，压缩机，冷凝器和膨胀阀的制冷循环，其顺序连接并使冷却剂在其中循环; 冷却剂通道使已经通过膨胀阀的冷却剂分支，然后与从样品台中的路径朝向压缩机返回的冷却剂合流; 以及调节器，用于调节通过样品台中的路径并在制冷循环中循环的冷却剂的量以及分配并流过冷却剂通道的冷却剂量。
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公开(公告)号：US08809727B2
公开(公告)日：2014-08-19
申请号：US13105981
申请日：2011-05-12
IPC分类号： B23K10/00
CPC分类号： H01J37/32018 , H01J37/32036 , H01J37/32467 , H01J37/32724 , H01J37/32899 , H01L21/67109 , H01L21/6719 , H01L21/68742 , H01L21/68771
摘要： The present invention relates to a heat treatment apparatus that performs activation annealing or defect repair annealing and surface oxidization which succeed impurity doping intended to control the conductive property of a semiconductor substrate. In the present invention, a sample to be heated is placed on a lower electrode in a plasma treatment chamber. A gap between an upper electrode and the lower electrode is filled with a gap whose main raw material is a rare gas (helium, argon, krypton, xenon, or the like) having a pressure close to the atmospheric pressure. A power fed from a high-frequency power supply is applied to the upper electrode in order to induce an atmospheric-pressure glow discharge. Gas heating in the gap between the electrodes, which depends on the glow discharge, is used to heat-treat the sample to be heated.
摘要翻译： 本发明涉及一种执行活化退火或缺陷修复退火和表面氧化的热处理设备，该热处理设备接受用于控制半导体衬底的导电性能的杂质掺杂。 在本发明中，将待加热的样品放置在等离子体处理室中的下电极上。 上部电极和下部电极之间的间隙填充有主要原料是具有接近大气压的压力的稀有气体（氦，氩，氪，氙等）的间隙。 从高频电源馈送的电力施加到上电极，以引起大气压辉光放电。 电极之间的间隙中的气体加热（其取决于辉光放电）用于热处理待加热的样品。
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