公开(公告)号：US06876082B2

公开(公告)日：2005-04-05

申请号：US10214638

申请日：2002-08-08

Applicant: Hsien-Ming Lee ,  Shing-Chuang Pan ,  Chung-Shi Liu ,  Chen-Hua Yu

Inventor： Hsien-Ming Lee ,  Shing-Chuang Pan ,  Chung-Shi Liu ,  Chen-Hua Yu

IPC: H01L21/285 ,  H01L21/768 ,  H01L23/48

CPC classification number: H01L21/76846 ,  H01L21/2855

Abstract: Within a microelectronic fabrication and a method for fabricating the microelectronic fabrication a barrier layer is formed over a substrate. Within the method and the microelectronic fabrication the barrier layer is formed of a refractory metal nitride barrier material having within its thickness a gradient in nitrogen concentration. The barrier layer has low resistivity and improved electromigration performance.