公开(公告)号：US20090026802A1

公开(公告)日：2009-01-29

申请号：US12052929

申请日：2008-03-21

申请人： Shinichi Imada ,  Manabu Abo ,  Hidetoshi Kurata ,  Norikazu Matsuura ,  Yumi Saito

发明人： Shinichi Imada ,  Manabu Abo ,  Hidetoshi Kurata ,  Norikazu Matsuura ,  Yumi Saito

IPC分类号： B62D21/15

CPC分类号： B62D21/152

摘要： A rear frame structure for a vehicle is disclosed, wherein an impact load can be satisfactorily absorbed in the case of a collision with a rear surface of the vehicle. The rear frame structure includes a pipe-shaped impact-absorbing member located between left and right rear frames. The impact-absorbing member has a center pipe that has a V shape in plan view, formed so as to protrude backward. The impact-absorbing member has left- and right-side pipes extending from the center pipe linearly upwardly to left and right end pipes. The impact load applied to the center pipe causes the left- and right-side pipes to undergo compressive deformation in their axial longitudinal directions as well as bending deformation towards the front of the vehicle body, whereby the impact load is absorbed.

摘要翻译： 公开了一种用于车辆的后框架结构，其中在与车辆的后表面碰撞的情况下可以令人满意地吸收冲击载荷。 后框架结构包括位于左右后框架之间的管状冲击吸收构件。 冲击吸收构件具有在俯视图中具有V形的中心管，其形成为向后突出。 冲击吸收构件具有从中心管线向上延伸到左右端管的左右管道。 施加到中心管的冲击载荷导致左侧管和右侧管在其轴向方向上经受压缩变形以及朝向车身前部的弯曲变形，从而吸收冲击载荷。

公开(公告)号：US20090269864A1

公开(公告)日：2009-10-29

申请号：US12253035

申请日：2008-10-16

申请人： Seiji Yokoyama ,  Yuuichirou Sekimoto ,  Shinichi Imada

发明人： Seiji Yokoyama ,  Yuuichirou Sekimoto ,  Shinichi Imada

IPC分类号： H01L21/66

CPC分类号： H01L21/31144 ,  H01L21/31116 ,  H01L21/76829 ,  H01L22/12 ,  H01L22/20 ,  H01L27/11568 ,  Y10S438/952

摘要： The present invention is directed to a method for manufacturing a semiconductor device by forming an ultraviolet radiation absorbing film of a silicon-rich film above a semiconductor substrate, measuring an extinction coefficient of the ultraviolet radiation absorbing film of a silicon-rich film for ultraviolet radiation, and etching the ultraviolet radiation absorbing film of a silicon-rich film under an etching condition using an oxygen gas flow rate corresponding to the extinction coefficient.

摘要翻译： 本发明涉及一种半导体器件的制造方法，其特征在于，在半导体基板的上方形成富硅膜的紫外线吸收膜，测定紫外线吸收膜的紫外线吸收膜的消光系数 使用与消光系数对应的氧气流量，在蚀刻条件下蚀刻富硅膜的紫外线吸收膜。

公开(公告)号：US07781320B2

公开(公告)日：2010-08-24

申请号：US12253035

申请日：2008-10-16

申请人： Seiji Yokoyama ,  Yuuichirou Sekimoto ,  Shinichi Imada

发明人： Seiji Yokoyama ,  Yuuichirou Sekimoto ,  Shinichi Imada

IPC分类号： H01L21/00

CPC分类号： H01L21/31144 ,  H01L21/31116 ,  H01L21/76829 ,  H01L22/12 ,  H01L22/20 ,  H01L27/11568 ,  Y10S438/952

摘要： The present invention is directed to a method for manufacturing a semiconductor device by forming an ultraviolet radiation absorbing film of a silicon-rich film above a semiconductor substrate, measuring an extinction coefficient of the ultraviolet radiation absorbing film of a silicon-rich film for ultraviolet radiation, and etching the ultraviolet radiation absorbing film of a silicon-rich film under an etching condition using an oxygen gas flow rate corresponding to the extinction coefficient.

摘要翻译： 本发明涉及一种半导体器件的制造方法，其特征在于，在半导体基板的上方形成富硅膜的紫外线吸收膜，测定紫外线吸收膜的紫外线吸收膜的消光系数 使用与消光系数对应的氧气流量，在蚀刻条件下蚀刻富硅膜的紫外线吸收膜。

公开(公告)号：US07568755B2

公开(公告)日：2009-08-04

申请号：US12052929

申请日：2008-03-21

申请人： Shinichi Imada ,  Manabu Abo ,  Hidetoshi Kurata ,  Norikazu Matsuura ,  Yumi Saito

发明人： Shinichi Imada ,  Manabu Abo ,  Hidetoshi Kurata ,  Norikazu Matsuura ,  Yumi Saito

IPC分类号： B62D25/08

CPC分类号： B62D21/152

摘要： A rear frame structure for a vehicle is disclosed, wherein an impact load can be satisfactorily absorbed in the case of a collision with a rear surface of the vehicle. The rear frame structure includes a pipe-shaped impact-absorbing member located between left and right rear frames. The impact-absorbing member has a center pipe that has a V shape in plan view, formed so as to protrude backward. The impact-absorbing member has left- and right-side pipes extending from the center pipe linearly upwardly to left and right end pipes. The impact load applied to the center pipe causes the left- and right-side pipes to undergo compressive deformation in their axial longitudinal directions as well as bending deformation towards the front of the vehicle body, whereby the impact load is absorbed.

摘要翻译： 公开了一种用于车辆的后框架结构，其中在与车辆的后表面碰撞的情况下可以令人满意地吸收冲击载荷。 后框架结构包括位于左右后框架之间的管状冲击吸收构件。 冲击吸收构件具有在俯视图中具有V形的中心管，其形成为向后突出。 冲击吸收构件具有从中心管线向上延伸到左右端管的左右管道。 施加到中心管的冲击载荷导致左侧管和右侧管在其轴向方向上经受压缩变形以及朝向车身前部的弯曲变形，从而吸收冲击载荷。