公开(公告)号：US20050273309A1

公开(公告)日：2005-12-08

申请号：US11143599

申请日：2005-06-03

申请人： Shinichiro Yoneyama ,  Hideki Mishima

发明人： Shinichiro Yoneyama ,  Hideki Mishima

IPC分类号： G06F17/50 ,  H01L21/82 ,  H01L29/00

CPC分类号： G06F17/5036

摘要： A plurality of elements constituting a semiconductor integrated circuit to be designed are each converted to a device model which merges an electric model exhibiting electric characteristics of the element and a thermal model exhibiting thermal characteristics of the element, and a thermal resistor is inserted between the elements where heat exchange occurs, thereby electric and thermal circuits are formed. Then circuit and heat equations are formulated with respect to the electric and thermal circuits, and then the equations are solved together to acquire electric and thermal characteristics of each element in the circuit. As a result, it becomes possible to achieve high-precision device characteristics which precisely reflect the temperature variation of each element in the circuit during simulation.

摘要翻译： 构成要设计的半导体集成电路的多个元件分别被转换为将表示该元件的电特性的电气模型和表现该元件的热特性的热模型合并的元件模型，并且在该元件之间插入热电阻器 发生热交换，从而形成电路和热电路。 然后针对电路和热回路制定电路和热方程，然后将这些方程组合在一起，以获得电路中每个元件的电和热特性。 结果，可以实现精确地反映模拟期间电路中每个元件的温度变化的高精度器件特性。