公开(公告)号：US08278715B2

公开(公告)日：2012-10-02

申请号：US13019846

申请日：2011-02-02

申请人： Yeh-Ning Jou ,  Chia-Wei Hung ,  Hwa-Chyi Chiou ,  Yeh-Jen Huang ,  Shu-Ling Chang

发明人： Yeh-Ning Jou ,  Chia-Wei Hung ,  Hwa-Chyi Chiou ,  Yeh-Jen Huang ,  Shu-Ling Chang

IPC分类号： H01L23/62 ,  H01L29/772

CPC分类号： H01L23/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： An ESD protection structure is disclosed. A substrate comprises a first conductive type. A first diffusion region is formed in the substrate. A first doped region is formed in the first diffusion region. A second doped region is formed in the first diffusion region. A third doped region is formed in the substrate. A first isolation region is formed in the substrate, covers a portion of the first diffusion region and is located between the second and the third doped regions. A fourth doped region is formed in the substrate. When the first doped region is coupled to a first power line and the third and the fourth doped regions are coupled to a second power line, an ESD current can be released to the second power line from the first power line. During the release of the ESD current, the second doped region is not electrically connected to the first power line.

摘要翻译： 公开了ESD保护结构。 衬底包括第一导电类型。 在基板中形成第一扩散区。 第一掺杂区形成在第一扩散区中。 在第一扩散区域中形成第二掺杂区域。 在衬底中形成第三掺杂区。 第一隔离区形成在衬底中，覆盖第一扩散区的一部分并位于第二和第三掺杂区之间。 在衬底中形成第四掺杂区。 当第一掺杂区耦合到第一电源线并且第三和第四掺杂区耦合到第二电源线时，ESD电流可以从第一电力线释放到第二电力线。 在释放ESD电流期间，第二掺杂区域不与第一电力线电连接。

公开(公告)号：US20120193718A1

公开(公告)日：2012-08-02

申请号：US13019846

申请日：2011-02-02

申请人： Yeh-Ning JOU ,  Chia-Wei Hung ,  Hwa-Chyi Chiou ,  Yeh-Jen Huang ,  Shu-Ling Chang

发明人： Yeh-Ning JOU ,  Chia-Wei Hung ,  Hwa-Chyi Chiou ,  Yeh-Jen Huang ,  Shu-Ling Chang

IPC分类号： H01L23/60

CPC分类号： H01L23/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： An ESD protection structure is disclosed. A substrate comprises a first conductive type. A first diffusion region is formed in the substrate. A first doped region is formed in the first diffusion region. A second doped region is formed in the first diffusion region. A third doped region is formed in the substrate. A first isolation region is formed in the substrate, covers a portion of the first diffusion region and is located between the second and the third doped regions. A fourth doped region is formed in the substrate. When the first doped region is coupled to a first power line and the third and the fourth doped regions are coupled to a second power line, an ESD current can be released to the second power line from the first power line. During the release of the ESD current, the second doped region is not electrically connected to the first power line.

摘要翻译： 公开了ESD保护结构。 衬底包括第一导电类型。 在基板中形成第一扩散区。 第一掺杂区形成在第一扩散区中。 在第一扩散区域中形成第二掺杂区域。 在衬底中形成第三掺杂区。 第一隔离区形成在衬底中，覆盖第一扩散区的一部分并位于第二和第三掺杂区之间。 在衬底中形成第四掺杂区。 当第一掺杂区耦合到第一电源线并且第三和第四掺杂区耦合到第二电源线时，ESD电流可以从第一电力线释放到第二电力线。 在释放ESD电流期间，第二掺杂区域不与第一电力线电连接。

公开(公告)号：US08278736B2

公开(公告)日：2012-10-02

申请号：US12875217

申请日：2010-09-03

申请人： Yeh-Ning Jou ,  Chia-Wei Hung ,  Shu-Ling Chang ,  Hwa-Chyi Chiou ,  Yeh-Jen Huang

发明人： Yeh-Ning Jou ,  Chia-Wei Hung ,  Shu-Ling Chang ,  Hwa-Chyi Chiou ,  Yeh-Jen Huang

IPC分类号： H01L29/739 ,  H01L23/60

CPC分类号： H01L27/0259 ,  H01L27/0274

摘要： An electrostatic discharge protection device coupled between a first power line and a second power line is provided. A first N-type doped region is formed in a P-type well. A first P-type doped region is formed in the first N-type doped region. A second P-type doped region includes a first portion and a second portion. The first portion of the second P-type doped region is formed in the first N-type doped region. The second portion of the second P-type doped region is formed outside of the first N-type doped region. A second N-type doped region is formed in the first portion of the second P-type doped region. The first P-type doped region, the first N-type doped region, the second P-type doped region and the second N-type doped region constitute an insulated gate bipolar transistor (IGBT).

摘要翻译： 提供耦合在第一电力线和第二电力线之间的静电放电保护装置。 在P型阱中形成第一N型掺杂区。 在第一N型掺杂区域中形成第一P型掺杂区域。 第二P型掺杂区域包括第一部分和第二部分。 第二P型掺杂区的第一部分形成在第一N型掺杂区中。 第二P型掺杂区的第二部分形成在第一N型掺杂区的外部。 在第二P型掺杂区域的第一部分中形成第二N型掺杂区域。 第一P型掺杂区域，第一N型掺杂区域，第二P型掺杂区域和第二N型掺杂区域构成绝缘栅双极晶体管（IGBT）。

公开(公告)号：US20120056239A1

公开(公告)日：2012-03-08

申请号：US12875217

申请日：2010-09-03

申请人： Yeh-Ning JOU ,  Chia-Wei Hung ,  Shu-Ling Chang ,  Hwa-Chyi Chiou ,  Yeh-Jen Huang

发明人： Yeh-Ning JOU ,  Chia-Wei Hung ,  Shu-Ling Chang ,  Hwa-Chyi Chiou ,  Yeh-Jen Huang

IPC分类号： H01L29/739 ,  H01L23/60

CPC分类号： H01L27/0259 ,  H01L27/0274

摘要： An electrostatic discharge protection device is coupled between a first power line and a second power line and comprises a P-type well, a first N-type doped region, a first P-type doped region, a second P-type doped region and a second N-type doped region. The first N-type doped region is formed in the P-type well. The first P-type doped region is formed in the first N-type doped region. The second P-type doped region comprises a first portion and a second portion. The first portion of the second P-type doped region is formed in the first N-type doped region. The second portion of the second P-type doped region is formed outside of the first N-type doped region. The second N-type doped region is formed in the first portion of the second P-type doped region. The first P-type doped region, the first N-type doped region, the second P-type doped region and the second N-type doped region constitute an insulated gate bipolar transistor (IGBT).

摘要翻译： 静电放电保护装置耦合在第一电力线和第二电力线之间，并且包括P型阱，第一N型掺杂区，第一P型掺杂区，第二P型掺杂区和 第二N型掺杂区域。 第一个N型掺杂区形成在P型阱中。 第一P型掺杂区域形成在第一N型掺杂区域中。 第二P型掺杂区域包括第一部分和第二部分。 第二P型掺杂区的第一部分形成在第一N型掺杂区中。 第二P型掺杂区的第二部分形成在第一N型掺杂区的外部。 第二N型掺杂区形成在第二P型掺杂区的第一部分中。 第一P型掺杂区域，第一N型掺杂区域，第二P型掺杂区域和第二N型掺杂区域构成绝缘栅双极晶体管（IGBT）。