公开(公告)号：US06437408B1

公开(公告)日：2002-08-20

申请号：US09904146

申请日：2001-07-13

申请人： Jiaw-Ren Shih ,  Shui-Hung Shen ,  Jian-Hsing Lee ,  Chrong Jung Lin

发明人： Jiaw-Ren Shih ,  Shui-Hung Shen ,  Jian-Hsing Lee ,  Chrong Jung Lin

IPC分类号： H01L2100

CPC分类号： H01L21/28123

摘要： A plasma damage protection cell using floating N/P/N and P/N/P structure, and a method to form the same are disclosed. Floating structures of the protection cell and the floating gates for the MOS devices are formed simultaneously on a semiconductor substrate having shallow trench isolation. The floating structures are implanted separately to form the N/P/N and P/N/P bipolar base, emitter and collector regions while the source/drain of the respective NMOS and PMOS devices are implanted with appropriate sequencing. The floating structures are connected to the substrate with appropriate polarity to provide protection at low leakage current levels and with tunable punch-through voltages.

摘要翻译： 公开了使用浮动N / P / N和P / N / P结构的等离子体损伤保护单元及其形成方法。 保护电池的浮动结构和用于MOS器件的浮置栅极同时形成在具有浅沟槽隔离的半导体衬底上。 分别注入浮动结构以形成N / P / N和P / N / P双极基极，发射极和集电极区域，同时以适当的顺序植入各个NMOS和PMOS器件的源极/漏极。 浮动结构以适当的极性连接到基板，以在低泄漏电流水平和可调穿通电压下提供保护。