公开(公告)号：US07700400B2

公开(公告)日：2010-04-20

申请号：US11722811

申请日：2005-10-21

申请人： Tsutomu Onishi ,  Takeshi Akatsuka ,  Shunichi Igarashi

发明人： Tsutomu Onishi ,  Takeshi Akatsuka ,  Shunichi Igarashi

IPC分类号： H01L21/00

CPC分类号： H01L31/03529 ,  H01L31/022441 ,  H01L31/0682 ,  Y02E10/547

摘要： The present invention can finely arrange p+-type diffusion layers and n+-type diffusion layers. A p+-type diffusion layer 2 and an n+-type diffusion layer 3 are simultaneously formed on a back surface 1a of a semiconductor substrate 1 in a state that the p+-type diffusion layer 2 and the n+-type diffusion layer 3 are arranged close to each other, and a back surface 1a side of the semiconductor substrate 1 on which outer end portions of the p+-type diffusion layers 2 and the n+-type diffusion layers 3 are brought into contact with each other is removed thus separating the p+-type diffusion layer 2 and the n+-type diffusion layer 3 from each other and hence, the p+-type diffusion layer 2 and the n+-type diffusion layer 3 can be separately arranged in a state that the p+-type diffusion layer 2 and the n+-type diffusion layer 3 are arranged close to each other.

摘要翻译： 本发明可以精细地排列p +型扩散层和n +型扩散层。 p +型扩散层2和n +型扩散层3同时形成在半导体衬底1的背面1a上，其状态是p +型扩散层2和n +型扩散层3靠近 并且除去p +型扩散层2和n +型扩散层3的外端部彼此接触的半导体衬底1的背面1a侧，从而将p + 型扩散层2和n +型扩散层3，因此，p +型扩散层2和n +型扩散层3可以分别排列在p +型扩散层2和 n +型扩散层3彼此靠近配置。

公开(公告)号：US06964141B2

公开(公告)日：2005-11-15

申请号：US10089108

申请日：2000-12-26

申请人： Shunichi Igarashi

发明人： Shunichi Igarashi

IPC分类号： E04G23/02 ,  E04B1/30

CPC分类号： E04G23/0218 ,  E04G23/0225 ,  E04G2023/0251 ,  E04G2023/0262 ,  Y10T428/249921 ,  Y10T428/249924 ,  Y10T428/249953

摘要： A high-ductility material or a high-ductility covering material is disposed on the outer circumferential surface of a member, such as a column, of a structure so as to confine expansion of apparent volume accompanying rupture of the member, to thereby control rupture of the member. The high-ductility material is a fibrous or rubber sheet material. The high-ductility material is disposed in such a manner as to surround the member. Alternatively, the high-ductility material is spirally wound or rolled on the member.

摘要翻译： 高延展性材料或高延展性覆盖材料设置在结构的构件（例如柱）的外周面上，以便限制伴随构件破裂的表观体积的膨胀，从而控制破裂 会员 高延展性材料是纤维或橡胶片材。 高延展性材料以围绕构件的方式设置。 或者，高延展性材料在构件上螺旋缠绕或滚动。

公开(公告)号：US20070264746A1

公开(公告)日：2007-11-15

申请号：US11722811

申请日：2005-10-21

申请人： Tsutomu Onishi ,  Takeshi Akatsuka ,  Shunichi Igarashi

发明人： Tsutomu Onishi ,  Takeshi Akatsuka ,  Shunichi Igarashi

IPC分类号： H01L31/18

CPC分类号： H01L31/03529 ,  H01L31/022441 ,  H01L31/0682 ,  Y02E10/547

摘要： The present invention can finely arrange p+-type diffusion layers and n+-type diffusion layers. A p+-type diffusion layer 2 and an n+-type diffusion layer 3 are simultaneously formed on a back surface 1a of a semiconductor substrate 1 in a state that the p+-type diffusion layer 2 and the n+-type diffusion layer 3 are arranged close to each other, and a back surface la side of the semiconductor substrate 1 on which outer end portions of the p+-type diffusion layers 2 and the n+-type diffusion layers 3 are brought into contact with each other is removed thus separating the p+-type diffusion layer 2 and the n+-type diffusion layer 3 from each other and hence, the p+-type diffusion layer 2 and the n+-type diffusion layer 3 can be separately arranged in a state that the p+-type diffusion layer 2 and the n+-type diffusion layer 3 are arranged close to each other.

摘要翻译： 本发明可以精细地布置p + + +型扩散层和n + + +型扩散层。 在半导体衬底1的背面1a上同时形成p + + +型扩散层2和n + + +型扩散层3， p + + +型扩散层2和n + + +型扩散层3彼此靠近地布置，并且半导体衬底1的背表面1a侧 除去p + SUP-型扩散层2和n + + +型扩散层3的外端部彼此接触，从而将p ^{+ 型扩散层2和n + + +型扩散层3，因此，p + +型扩散层2和 可以在p + +型扩散层2和n + +型扩散层3的状态下分别布置n + 扩散层3彼此靠近地布置。}

公开(公告)号：US20050284032A1

公开(公告)日：2005-12-29

申请号：US11209385

申请日：2005-08-22

申请人： Shunichi Igarashi

发明人： Shunichi Igarashi

IPC分类号： E04G23/02 ,  E04D1/36

CPC分类号： E04G23/0218 ,  E04G23/0225 ,  E04G2023/0251 ,  E04G2023/0262 ,  Y10T428/249921 ,  Y10T428/249924 ,  Y10T428/249953

摘要： A high-ductility material or a high-ductility covering material is disposed on the outer circumferential surface of a member, such as a column, of a structure so as to confine expansion of apparent volume accompanying rupture of the member, to thereby control rupture of the member. The high-ductility material is a fibrous or rubber sheet material. The high-ductility material is disposed in such a manner as to surround the member. Alternatively, the high-ductility material is spirally wound or rolled on the member.

摘要翻译： 高延展性材料或高延展性覆盖材料设置在结构的构件（例如柱）的外周面上，以便限制伴随构件破裂的表观体积的膨胀，从而控制破裂 会员 高延展性材料是纤维或橡胶片材。 高延展性材料以围绕构件的方式设置。 或者，高延展性材料在构件上螺旋缠绕或滚动。

公开(公告)号：US20050076596A1

公开(公告)日：2005-04-14

申请号：US10490017

申请日：2002-09-25

申请人： Shunichi Igarashi

发明人： Shunichi Igarashi

IPC分类号： E04C5/04 ,  E04C5/07 ,  E04G23/02 ,  E04G23/00

CPC分类号： E04G23/0218 ,  E04C5/04 ,  E04C5/07 ,  E04G23/0225 ,  E04G2023/0251 ,  E04G2023/0255

摘要： Disclosed is a reinforcing member, which comprises a woven body formed by a weaving process, or a tape-shaped or sheet-shaped body, having a high ductility and high bendability. The reinforcing member is adapted to be installed on a surface of a structure member or a boundary portion of the structure member, or inside a structure member, to reinforce the structure member. The woven body, or a tape-shaped or sheet-shaped body, has a Young's modulus equal to or less than that of the structure member, and a tensile fracture strain of 10% or more. The Young's modulus of the reinforcing member is preferably in the range of 1/2 to 1/20, more preferably 1/5 to 1/10, of that of the structure member. Specifically, the Young's modulus of the woven body is preferably in the range of 500 to 50000 MPa, more preferably 1000 to 10000 MPa. The present invention also provides a reinforced structure using the above reinforcing member.

摘要翻译： 公开了一种加强构件，其包括通过编织工艺形成的织造体，或具有高延展性和高弯曲性的带状或片状体。 加强构件适于安装在结构构件的表面或结构构件的边界部分或结构构件的内部，以加强结构构件。 编织体或带状或片状体的杨氏模量等于或小于结构构件的杨氏模量，拉伸断裂应变为10％以上。 加强构件的杨氏模量优选为结构构件的杨氏模量的1/2至1/20，更优选地为1/5至1/10。 具体而言，机织物的杨氏模量优选为500〜50000MPa，更优选为1000〜10000MPa的范围。 本发明还提供一种使用上述加强构件的加强结构。