公开(公告)号：US6145345A

公开(公告)日：2000-11-14

申请号：US092380

申请日：1998-06-05

申请人： Stanley F. Marszalek ,  Katherine Theresa Nelson ,  Kenneth Lee Walker ,  Kim Willard Womack ,  Man Fei Yan

发明人： Stanley F. Marszalek ,  Katherine Theresa Nelson ,  Kenneth Lee Walker ,  Kim Willard Womack ,  Man Fei Yan

IPC分类号： C03B37/018 ,  C23C16/40

CPC分类号： C03B37/01815

摘要： The deposition rate of MCVD processes is enhanced by applying at least a first and a second independently controlled heat source to a plurality of reactants which are used to form deposited particulate matter. The first heat source is adjusted so as to provide at least a specified rate of reaction for the reactants, and the second source is adjusted so as to provide at least a specified deposition rate for the particulate matter.

摘要翻译： 通过将至少第一和第二独立控制的热源施加到用于形成沉积的颗粒物质的多个反应物中来增强MCVD工艺的沉积速率。 调节第一热源以便为反应物提供至少一定的反应速率，并且调节第二源以便为颗粒物提供至少一个特定的沉积速率。