公开(公告)号：US07659582B2

公开(公告)日：2010-02-09

申请号：US11698558

申请日：2007-01-26

申请人： Steve Droes ,  Masao Moriguchi ,  Yutaka Takafuji

发明人： Steve Droes ,  Masao Moriguchi ,  Yutaka Takafuji

IPC分类号： H01L27/01 ,  H01L27/12 ,  H01L31/0392

CPC分类号： H01L21/76254 ,  H01L27/1266 ,  H01L29/78603

摘要： A system and method for hydrogen (H) exfoliation are provided for attaching silicon-on-insulator (SOI) fabricated circuits to carrier substrates. The method comprises: providing a SOI substrate, including a silicon (Si) active layer and buried oxide (BOX) layer overlying a Si substrate; forming a circuit in the Si active layer; forming a blocking mask over selected circuit areas; implanting H in the Si substrate; annealing; removing the blocking mask; in response to the H implanting, forming a cleaving plane in the Si substrate; bonding the circuit the top oxide layer to the carrier substrate; and, cleaving the Si substrate. More specifically, the cleaving plane is formed along a horizontal peak concentration (Rp) H layer in the Si substrate and along the buried oxide layer interface.

摘要翻译： 提供氢（H）剥离的系统和方法用于将绝缘体上硅（SOI）制造的电路附着到载体衬底上。 该方法包括：提供SOI衬底，其包括覆盖在Si衬底上的硅（Si）有源层和掩埋氧化物（BOX）层; 在Si有源层中形成电路; 在选定的电路区域上形成阻挡掩模; 在Si衬底中注入H; 退火; 去除阻挡掩模; 响应于H植入，在Si衬底中形成切割平面; 将电路的顶部氧化物层接合到载体衬底; 并切割Si衬底。 更具体地说，切割平面沿着Si衬底中的水平峰值浓度（Rp）H层并且沿掩埋氧化物层界面形成。

公开(公告)号：US07179719B2

公开(公告)日：2007-02-20

申请号：US10953938

申请日：2004-09-28

申请人： Steve Droes ,  Masao Moriguchi ,  Yutaka Takafuji

发明人： Steve Droes ,  Masao Moriguchi ,  Yutaka Takafuji

IPC分类号： H01L21/46 ,  H01L21/30

CPC分类号： H01L21/76254 ,  H01L27/1266 ,  H01L29/78603

摘要： A system and method for hydrogen (H) exfoliation are provided for attaching silicon-on-insulator (SOI) fabricated circuits to carrier substrates. The method comprises: providing a SOI substrate, including a silicon (Si) active layer and buried oxide (BOX) layer overlying a Si substrate; forming a circuit in the Si active layer; forming a blocking mask over selected circuit areas; implanting H in the Si substrate; annealing; removing the blocking mask; in response to the H implanting, forming a cleaving plane in the Si substrate; bonding the circuit the top oxide layer to the carrier substrate; and, cleaving the Si substrate. More specifically, the cleaving plane is formed along a horizontal peak concentration (Rp) H layer in the Si substrate and along the buried oxide layer interface.

摘要翻译： 提供氢（H）剥离的系统和方法用于将绝缘体上硅（SOI）制造的电路附着到载体衬底上。 该方法包括：提供SOI衬底，其包括覆盖在Si衬底上的硅（Si）有源层和掩埋氧化物（BOX）层; 在Si有源层中形成电路; 在选定的电路区域上形成阻挡掩模; 在Si衬底中注入H; 退火; 去除阻挡掩模; 响应于H植入，在Si衬底中形成切割平面; 将电路的顶部氧化物层接合到载体衬底; 并切割Si衬底。 更具体地说，切割平面沿着Si衬底中的水平峰值浓度（Rp）H层并且沿掩埋氧化物层界面形成。

公开(公告)号：US20070122998A1

公开(公告)日：2007-05-31

申请号：US11698558

申请日：2007-01-26

申请人： Steve Droes ,  Masao Moriguchi ,  Yutaka Takafuji

发明人： Steve Droes ,  Masao Moriguchi ,  Yutaka Takafuji

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76254 ,  H01L27/1266 ,  H01L29/78603

摘要： A system and method for hydrogen (H) exfoliation are provided for attaching silicon-on-insulator (SOI) fabricated circuits to carrier substrates. The method comprises: providing a SOI substrate, including a silicon (Si) active layer and buried oxide (BOX) layer overlying a Si substrate; forming a circuit in the Si active layer; forming a blocking mask over selected circuit areas; implanting H in the Si substrate; annealing; removing the blocking mask; in response to the H implanting, forming a cleaving plane in the Si substrate; bonding the circuit the top oxide layer to the carrier substrate; and, cleaving the Si substrate. More specifically, the cleaving plane is formed along a horizontal peak concentration (Rp) H layer in the Si substrate and along the buried oxide layer interface.

摘要翻译： 提供氢（H）剥离的系统和方法用于将绝缘体上硅（SOI）制造的电路附着到载体衬底上。 该方法包括：提供SOI衬底，其包括覆盖在Si衬底上的硅（Si）有源层和掩埋氧化物（BOX）层; 在Si有源层中形成电路; 在选定的电路区域上形成阻挡掩模; 在Si衬底中注入H; 退火; 去除阻挡掩模; 响应于H植入，在Si衬底中形成切割平面; 将电路的顶部氧化物层接合到载体衬底; 并切割Si衬底。 更具体地说，切割平面沿着Si衬底中的水平峰值浓度（Rp）H层并且沿掩埋氧化物层界面形成。

公开(公告)号：US20060068565A1

公开(公告)日：2006-03-30

申请号：US10953938

申请日：2004-09-28

申请人： Steve Droes ,  Masao Moriguchi ,  Yutaka Takafuji

发明人： Steve Droes ,  Masao Moriguchi ,  Yutaka Takafuji

IPC分类号： H01L21/44

CPC分类号： H01L21/76254 ,  H01L27/1266 ,  H01L29/78603

摘要： A system and method for hydrogen (H) exfoliation are provided for attaching silicon-on-insulator (SOI) fabricated circuits to carrier substrates. The method comprises: providing a SOI substrate, including a silicon (Si) active layer and buried oxide (BOX) layer overlying a Si substrate; forming a circuit in the Si active layer; forming a blocking mask over selected circuit areas; implanting H in the Si substrate; annealing; removing the blocking mask; in response to the H implanting, forming a cleaving plane in the Si substrate; bonding the circuit the top oxide layer to the carrier substrate; and, cleaving the Si substrate. More specifically, the cleaving plane is formed along a horizontal peak concentration (Rp) H layer in the Si substrate and along the buried oxide layer interface.

摘要翻译： 提供氢（H）剥离的系统和方法用于将绝缘体上硅（SOI）制造的电路附着到载体衬底上。 该方法包括：提供SOI衬底，其包括覆盖在Si衬底上的硅（Si）有源层和掩埋氧化物（BOX）层; 在Si有源层中形成电路; 在选定的电路区域上形成阻挡掩模; 在Si衬底中注入H; 退火; 去除阻挡掩模; 响应于H植入，在Si衬底中形成切割平面; 将电路的顶部氧化物层接合到载体衬底; 并切割Si衬底。 更具体地说，切割平面沿着Si衬底中的水平峰值浓度（Rp）H层并且沿掩埋氧化物层界面形成。