公开(公告)号：US07659582B2

公开(公告)日：2010-02-09

申请号：US11698558

申请日：2007-01-26

申请人： Steve Droes ,  Masao Moriguchi ,  Yutaka Takafuji

发明人： Steve Droes ,  Masao Moriguchi ,  Yutaka Takafuji

IPC分类号： H01L27/01 ,  H01L27/12 ,  H01L31/0392

CPC分类号： H01L21/76254 ,  H01L27/1266 ,  H01L29/78603

摘要： A system and method for hydrogen (H) exfoliation are provided for attaching silicon-on-insulator (SOI) fabricated circuits to carrier substrates. The method comprises: providing a SOI substrate, including a silicon (Si) active layer and buried oxide (BOX) layer overlying a Si substrate; forming a circuit in the Si active layer; forming a blocking mask over selected circuit areas; implanting H in the Si substrate; annealing; removing the blocking mask; in response to the H implanting, forming a cleaving plane in the Si substrate; bonding the circuit the top oxide layer to the carrier substrate; and, cleaving the Si substrate. More specifically, the cleaving plane is formed along a horizontal peak concentration (Rp) H layer in the Si substrate and along the buried oxide layer interface.

摘要翻译： 提供氢（H）剥离的系统和方法用于将绝缘体上硅（SOI）制造的电路附着到载体衬底上。 该方法包括：提供SOI衬底，其包括覆盖在Si衬底上的硅（Si）有源层和掩埋氧化物（BOX）层; 在Si有源层中形成电路; 在选定的电路区域上形成阻挡掩模; 在Si衬底中注入H; 退火; 去除阻挡掩模; 响应于H植入，在Si衬底中形成切割平面; 将电路的顶部氧化物层接合到载体衬底; 并切割Si衬底。 更具体地说，切割平面沿着Si衬底中的水平峰值浓度（Rp）H层并且沿掩埋氧化物层界面形成。

公开(公告)号：US20070122998A1

公开(公告)日：2007-05-31

申请号：US11698558

申请日：2007-01-26

申请人： Steve Droes ,  Masao Moriguchi ,  Yutaka Takafuji

发明人： Steve Droes ,  Masao Moriguchi ,  Yutaka Takafuji

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76254 ,  H01L27/1266 ,  H01L29/78603

摘要： A system and method for hydrogen (H) exfoliation are provided for attaching silicon-on-insulator (SOI) fabricated circuits to carrier substrates. The method comprises: providing a SOI substrate, including a silicon (Si) active layer and buried oxide (BOX) layer overlying a Si substrate; forming a circuit in the Si active layer; forming a blocking mask over selected circuit areas; implanting H in the Si substrate; annealing; removing the blocking mask; in response to the H implanting, forming a cleaving plane in the Si substrate; bonding the circuit the top oxide layer to the carrier substrate; and, cleaving the Si substrate. More specifically, the cleaving plane is formed along a horizontal peak concentration (Rp) H layer in the Si substrate and along the buried oxide layer interface.

摘要翻译： 提供氢（H）剥离的系统和方法用于将绝缘体上硅（SOI）制造的电路附着到载体衬底上。 该方法包括：提供SOI衬底，其包括覆盖在Si衬底上的硅（Si）有源层和掩埋氧化物（BOX）层; 在Si有源层中形成电路; 在选定的电路区域上形成阻挡掩模; 在Si衬底中注入H; 退火; 去除阻挡掩模; 响应于H植入，在Si衬底中形成切割平面; 将电路的顶部氧化物层接合到载体衬底; 并切割Si衬底。 更具体地说，切割平面沿着Si衬底中的水平峰值浓度（Rp）H层并且沿掩埋氧化物层界面形成。

公开(公告)号：US20060068565A1

公开(公告)日：2006-03-30

申请号：US10953938

申请日：2004-09-28

申请人： Steve Droes ,  Masao Moriguchi ,  Yutaka Takafuji

发明人： Steve Droes ,  Masao Moriguchi ,  Yutaka Takafuji

IPC分类号： H01L21/44

CPC分类号： H01L21/76254 ,  H01L27/1266 ,  H01L29/78603

摘要： A system and method for hydrogen (H) exfoliation are provided for attaching silicon-on-insulator (SOI) fabricated circuits to carrier substrates. The method comprises: providing a SOI substrate, including a silicon (Si) active layer and buried oxide (BOX) layer overlying a Si substrate; forming a circuit in the Si active layer; forming a blocking mask over selected circuit areas; implanting H in the Si substrate; annealing; removing the blocking mask; in response to the H implanting, forming a cleaving plane in the Si substrate; bonding the circuit the top oxide layer to the carrier substrate; and, cleaving the Si substrate. More specifically, the cleaving plane is formed along a horizontal peak concentration (Rp) H layer in the Si substrate and along the buried oxide layer interface.

摘要翻译： 提供氢（H）剥离的系统和方法用于将绝缘体上硅（SOI）制造的电路附着到载体衬底上。 该方法包括：提供SOI衬底，其包括覆盖在Si衬底上的硅（Si）有源层和掩埋氧化物（BOX）层; 在Si有源层中形成电路; 在选定的电路区域上形成阻挡掩模; 在Si衬底中注入H; 退火; 去除阻挡掩模; 响应于H植入，在Si衬底中形成切割平面; 将电路的顶部氧化物层接合到载体衬底; 并切割Si衬底。 更具体地说，切割平面沿着Si衬底中的水平峰值浓度（Rp）H层并且沿掩埋氧化物层界面形成。

公开(公告)号：US07179719B2

公开(公告)日：2007-02-20

申请号：US10953938

申请日：2004-09-28

申请人： Steve Droes ,  Masao Moriguchi ,  Yutaka Takafuji

发明人： Steve Droes ,  Masao Moriguchi ,  Yutaka Takafuji

IPC分类号： H01L21/46 ,  H01L21/30

CPC分类号： H01L21/76254 ,  H01L27/1266 ,  H01L29/78603

摘要： A system and method for hydrogen (H) exfoliation are provided for attaching silicon-on-insulator (SOI) fabricated circuits to carrier substrates. The method comprises: providing a SOI substrate, including a silicon (Si) active layer and buried oxide (BOX) layer overlying a Si substrate; forming a circuit in the Si active layer; forming a blocking mask over selected circuit areas; implanting H in the Si substrate; annealing; removing the blocking mask; in response to the H implanting, forming a cleaving plane in the Si substrate; bonding the circuit the top oxide layer to the carrier substrate; and, cleaving the Si substrate. More specifically, the cleaving plane is formed along a horizontal peak concentration (Rp) H layer in the Si substrate and along the buried oxide layer interface.

摘要翻译： 提供氢（H）剥离的系统和方法用于将绝缘体上硅（SOI）制造的电路附着到载体衬底上。 该方法包括：提供SOI衬底，其包括覆盖在Si衬底上的硅（Si）有源层和掩埋氧化物（BOX）层; 在Si有源层中形成电路; 在选定的电路区域上形成阻挡掩模; 在Si衬底中注入H; 退火; 去除阻挡掩模; 响应于H植入，在Si衬底中形成切割平面; 将电路的顶部氧化物层接合到载体衬底; 并切割Si衬底。 更具体地说，切割平面沿着Si衬底中的水平峰值浓度（Rp）H层并且沿掩埋氧化物层界面形成。

公开(公告)号：US08017492B2

公开(公告)日：2011-09-13

申请号：US12222598

申请日：2008-08-12

申请人： Yasumori Fukushima ,  Masao Moriguchi ,  Yutaka Takafuji

发明人： Yasumori Fukushima ,  Masao Moriguchi ,  Yutaka Takafuji

IPC分类号： H01L21/76

CPC分类号： H01L21/84 ,  H01L21/32 ,  H01L21/76254 ,  H01L27/1203 ,  H01L29/78654

摘要： A method for fabricating a semiconductor device according to the present invention is a method for fabricating a semiconductor device including a substrate layer including a plurality of first regions each having an active region and a plurality of second regions each being provided between adjacent ones of the first region. The fabrication method includes an isolation insulation film formation step of forming an isolation insulation film in each of the second regions so that a surface of the isolation insulation film becomes at the same height as that of a surface of a gate oxide film covering the active region, a peeling layer formation step of forming a peeling layer by ion-implanting hydrogen into the substrate layer after the isolation insulation film formation step, and a separation step of separating part of the substrate layer along the peeling layer.

摘要翻译： 根据本发明的制造半导体器件的方法是一种半导体器件的制造方法，该半导体器件包括：衬底层，该衬底层包括多个第一区域，每个第一区域具有有源区域和多个第二区域， 地区。 制造方法包括隔离绝缘膜形成步骤，在每个第二区域中形成隔离绝缘膜，使得隔离绝缘膜的表面变得与覆盖有源区域的栅极氧化物膜的表面相同的高度 剥离层形成步骤，在隔离绝缘膜形成步骤之后，通过将氢离子注入到衬底层中形成剥离层，以及分离步骤，用于沿剥离层分离衬底层的一部分。

公开(公告)号：US07897443B2

公开(公告)日：2011-03-01

申请号：US11883483

申请日：2006-01-17

申请人： Masao Moriguchi ,  Yutaka Takafuji ,  Steven Roy Droes

发明人： Masao Moriguchi ,  Yutaka Takafuji ,  Steven Roy Droes

IPC分类号： H01L21/762

CPC分类号： H01L27/1266 ,  H01L21/76243 ,  H01L21/76256 ,  H01L27/1214 ,  H01L29/6659 ,  H01L29/66772 ,  H01L29/7833

摘要： The present invention provides a production method of a semiconductor device, which can improve characteristics of a semiconductor element including a single crystal semiconductor layer formed by transferring on an insulating substrate. The present invention is a production method of a semiconductor device comprising a single crystal semiconductor layer formed on an insulating substrate, the production method comprising the steps of: implanting a substance for separation into a single crystal semiconductor substrate, thereby forming a separation layer; transferring a part of the single crystal semiconductor substrate, separated at the separation layer, onto the insulating substrate, thereby forming the single crystal semiconductor layer; forming a hydrogen-containing layer on at least one side of the single crystal semiconductor layer; and diffusing hydrogen from the hydrogen-containing layer to the single crystal semiconductor layer.

摘要翻译： 本发明提供一种半导体器件的制造方法，其能够提高包含通过在绝缘基板上转印而形成的单晶半导体层的半导体元件的特性。 本发明是一种半导体器件的制造方法，其包括在绝缘基板上形成的单晶半导体层，其制造方法包括以下步骤：将分离用物质注入单晶半导体基板，形成分离层; 将在分离层分离的单晶半导体衬底的一部分转印到绝缘衬底上，从而形成单晶半导体层; 在所述单晶半导体层的至少一侧上形成含氢层; 并将氢从含氢层扩散到单晶半导体层。

公开(公告)号：US20080128807A1

公开(公告)日：2008-06-05

申请号：US11792487

申请日：2005-11-15

申请人： Yasumori Fukushima ,  Yutaka Takafuji ,  Masao Moriguchi

发明人： Yasumori Fukushima ,  Yutaka Takafuji ,  Masao Moriguchi

IPC分类号： H01L27/00 ,  H01L21/00

CPC分类号： H01L27/1203 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/265 ,  H01L21/31662 ,  H01L21/32 ,  H01L21/76254 ,  H01L21/84 ,  H01L29/7833

摘要： In fabricating a semiconductor device, an element forming surface formation step of forming a plurality of element forming surfaces of different heights on a semiconductor layer to have different levels, a semiconductor element formation step of forming a plurality of semiconductor elements and, one in each of a corresponding number of regions of the semiconductor layer, each region including an associated one of the plurality of element forming surfaces, a level-difference compensation insulating film formation step of forming a level-difference compensation insulating film on the semiconductor layer to cover the semiconductor elements and have a surface with different levels along the element forming surfaces, a release layer formation step of forming a release layer in the semiconductor layer by ion-implanting a peeling material through the level-difference compensation insulating film into the semiconductor layer, and a separation step of separating part of the semiconductor layer along the release layer are performed.

摘要翻译： 在制造半导体器件时，在半导体层上形成具有不同高度的多个元件形成表面以形成不同电平的元件形成表面形成步骤，形成多个半导体元件的半导体元件形成步骤和 所述半导体层的相应数量的区域，每个区域包括所述多个元件形成表面中的相关联的一个元件形成表面;电平差补偿绝缘膜形成步骤，在所述半导体层上形成电平差补偿绝缘膜以覆盖所述半导体 元件，并且具有沿着元件形成表面具有不同水平的表面;剥离层形成步骤，通过将剥离材料通过电位差补偿绝缘膜离子注入到半导体层中而在半导体层中形成剥离层，以及 分离半导体层的一部分的分离步骤 沿着释放层进行。

公开(公告)号：US20050245046A1

公开(公告)日：2005-11-03

申请号：US11086680

申请日：2005-03-23

申请人： Yutaka Takafuji ,  Yasumori Fukushima ,  Masao Moriguchi

发明人： Yutaka Takafuji ,  Yasumori Fukushima ,  Masao Moriguchi

IPC分类号： G02F1/1368 ,  G02F1/136 ,  G09F9/30 ,  G09G3/00 ,  H01L21/00 ,  H01L21/02 ,  H01L21/316 ,  H01L21/336 ,  H01L21/469 ,  H01L21/76 ,  H01L21/762 ,  H01L21/77 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/08 ,  H01L27/088 ,  H01L27/092 ,  H01L27/10 ,  H01L27/12 ,  H01L29/00 ,  H01L29/786

CPC分类号： H01L27/1266 ,  H01L21/76202 ,  H01L21/76254 ,  H01L27/1203 ,  H01L27/1214 ,  H01L29/78603 ,  H01L29/78609

摘要： The present invention provides a semiconductor substrate, which comprises a singlecrystalline Si substrate which includes an active layer having a channel region, a source region, and a drain region, the singlecrystalline Si substrate including at least a part of a device structure not containing a well-structure or a channel stop region; a gate insulating film formed on the singlecrystalline Si substrate; a gate electrode formed on the gate insulating film; a LOCOS oxide film whose thickness is more than a thickness of the gate insulating film, the LOCOS oxide film being formed on the singlecrystalline Si substrate by surrounding the active layer; and an insulating film formed over the gate electrode and the LOCOS oxide film. On this account, on fabricating the semiconductor device having a high-performance integration system by forming the non-singlecrystalline Si semiconductor element and the singlecrystalline Si semiconductor element on the large insulating substrate, the process for making the singlecrystalline Si is simplified. Further, the foregoing arrangement provides a semiconductor substrate and a fabrication method thereof, which ensures device isolation of the minute singlecrystalline Si semiconductor element without highly-accurate photolithography, when the singlecrystalline Si semiconductor element is transferred onto the large insulating substrate.

摘要翻译： 本发明提供一种半导体衬底，其包括单晶Si衬底，其包括具有沟道区，源极区和漏极区的有源层，所述单晶Si衬底包括至少部分不包含阱的器件结构 结构或通道停止区域; 形成在单晶Si衬底上的栅极绝缘膜; 形成在栅极绝缘膜上的栅电极; LOCOS氧化物膜的厚度大于栅极绝缘膜的厚度，LOCOS氧化物膜通过围绕有源层而形成在单晶Si衬底上; 以及形成在栅电极和LOCOS氧化物膜上的绝缘膜。 因此，通过在大的绝缘基板上形成非单晶Si半导体元件和单晶Si半导体元件来制造具有高性能的集成系统的半导体器件，简化了制造单晶硅的工艺。 此外，上述结构提供半导体衬底及其制造方法，当将单晶硅半导体元件转印到大绝缘衬底上时，确保了微单晶Si半导体元件的器件隔离而没有高精度光刻。

公开(公告)号：US20090191671A1

公开(公告)日：2009-07-30

申请号：US12416240

申请日：2009-04-01

申请人： Yutaka Takafuji ,  Asumori Fukushima ,  Masao Moriguchi

发明人： Yutaka Takafuji ,  Asumori Fukushima ,  Masao Moriguchi

IPC分类号： H01L21/762

CPC分类号： H01L27/1266 ,  H01L21/76202 ,  H01L21/76254 ,  H01L27/1203 ,  H01L27/1214 ,  H01L29/78603 ,  H01L29/78609

摘要： The present invention provides a semiconductor substrate, which comprises a singlecrystalline Si substrate which includes an active layer having a channel region, a source region, and a drain region, the singlecrystalline Si substrate including at least a part of a device structure not containing a well-structure or a channel stop region; a gate insulating film formed on the singlecrystalline Si substrate; a gate electrode formed on the gate insulating film; a LOCOS oxide film whose thickness is more than a thickness of the gate insulating film, the LOCOS oxide film being formed on the singlecrystalline Si substrate by surrounding the active layer; and an insulating film formed over the gate electrode and the LOCOS oxide film. On this account, on fabricating the semiconductor device having a high-performance integration system by forming the non-singlecrystalline Si semiconductor element and the singlecrystalline Si semiconductor element on the large insulating substrate, the process for making the singlecrystalline Si is simplified. Further, the foregoing arrangement provides a semiconductor substrate and a fabrication method thereof, which ensures device isolation of the minute singlecrystalline Si semiconductor element without highly-accurate photolithography, when the singlecrystalline Si semiconductor element is transferred onto the large insulating substrate.

摘要翻译： 本发明提供了一种半导体衬底，其包括单晶Si衬底，其包括具有沟道区，源极区和漏极区的有源层，所述单晶Si衬底包括不包含阱的器件结构的至少一部分 结构或通道停止区域; 形成在单晶Si衬底上的栅极绝缘膜; 形成在栅极绝缘膜上的栅电极; LOCOS氧化物膜的厚度大于栅极绝缘膜的厚度，LOCOS氧化物膜通过围绕有源层而形成在单晶Si衬底上; 以及形成在栅电极和LOCOS氧化物膜上的绝缘膜。 因此，通过在大的绝缘基板上形成非单晶Si半导体元件和单晶Si半导体元件来制造具有高性能的集成系统的半导体器件，简化了制造单晶硅的工艺。 此外，上述结构提供半导体衬底及其制造方法，当将单晶硅半导体元件转印到大绝缘衬底上时，确保了微单晶Si半导体元件的器件隔离而没有高精度光刻。

公开(公告)号：US20080149928A1

公开(公告)日：2008-06-26

申请号：US11883483

申请日：2006-01-17

申请人： Masao Moriguchi ,  Yutaka Takafuji ,  Steven Roy Droes

发明人： Masao Moriguchi ,  Yutaka Takafuji ,  Steven Roy Droes

IPC分类号： H01L29/06 ,  H01L21/18

CPC分类号： H01L27/1266 ,  H01L21/76243 ,  H01L21/76256 ,  H01L27/1214 ,  H01L29/6659 ,  H01L29/66772 ,  H01L29/7833

摘要： The present invention provides a production method of a semiconductor device, which can improve characteristics of a semiconductor element including a single crystal semiconductor layer formed by transferring on an insulating substrate. The present invention is a production method of a semiconductor device comprising a single crystal semiconductor layer formed on an insulating substrate, the production method comprising the steps of: implanting a substance for separation into a single crystal semiconductor substrate, thereby forming a separation layer; transferring a part of the single crystal semiconductor substrate, separated at the separation layer, onto the insulating substrate, thereby forming the single crystal semiconductor layer; forming a hydrogen-containing layer on at least one side of the single crystal semiconductor layer; and diffusing hydrogen from the hydrogen-containing layer to the single crystal semiconductor layer.

摘要翻译： 本发明提供一种半导体器件的制造方法，其能够提高包含通过在绝缘基板上转印而形成的单晶半导体层的半导体元件的特性。 本发明是一种半导体器件的制造方法，其包括在绝缘基板上形成的单晶半导体层，其制造方法包括以下步骤：将分离用物质注入单晶半导体基板，形成分离层; 将在分离层分离的单晶半导体衬底的一部分转印到绝缘衬底上，从而形成单晶半导体层; 在所述单晶半导体层的至少一侧上形成含氢层; 并将氢从含氢层扩散到单晶半导体层。