公开(公告)号：US06787882B2

公开(公告)日：2004-09-07

申请号：US10261586

申请日：2002-10-02

Applicant: Steven Kirchoefer

Inventor： Steven Kirchoefer

IPC: H01L2993

CPC classification number: H01L29/93 ,  H01L29/155

Abstract: A semiconductor device includes a plurality of barrier layers and a plurality of quantum well layers which are alternately interleaved with each other and disposed on a substrate of semiconductor material so as to form a multiple-heterojunction varactor diode. The barrier layers and quantum well layers are doped with impurities. The varactor diode includes an ohmic contact which is electrically connected to a heavily doped embedded region and a Schottky contact which is electrically connected to a depletion region of the diode. The ohmic contact and the Schottky contact enable an external voltage source to be applied to the contacts so as to provide a bias voltage to the varactor diode. A variable capacitance is produced as a result of the depletion region varying with a variation in the bias voltage. The varactor diode also provides a constant series resistance.

Abstract translation: 半导体器件包括多个势垒层和多个量子阱层，它们彼此交替交替并且设置在半导体材料的衬底上，以便形成多异质结变容二极管。 阻挡层和量子阱层掺杂有杂质。 变容二极管包括电连接到重掺杂的嵌入区域的欧姆接触和电连接到二极管的耗尽区的肖特基接触。 欧姆接触和肖特基接触使得能够将外部电压源施加到触点，以便向变容二极管提供偏置电压。 由于耗尽区域随着偏置电压的变化而变化，产生可变电容。 变容二极管还提供恒定的串联电阻。