公开(公告)号：US20090308836A1

公开(公告)日：2009-12-17

申请号：US12352700

申请日：2009-01-13

申请人： Junaid Ahmed Siddiqui ,  Daniel Hernandez Castillo ,  Steven Masaml Aragaki ,  Robin Edward Richards

发明人： Junaid Ahmed Siddiqui ,  Daniel Hernandez Castillo ,  Steven Masaml Aragaki ,  Robin Edward Richards

IPC分类号： B44C1/22 ,  C09K13/00

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/32125

摘要： A chemical mechanical polishing composition contains 1) water, 2) optionally an abrasive material, 3) an oxidizer, preferably a per-type oxidizer, 4) a small amount of soluble metal-ion oxidizer/polishing accelerator, a metal-ion polishing accelerator bound to particles such as to abrasive particles, or both; and 5) at least one of the group selected from a) a small amount of a chelator, b) a small amount of a dihydroxy enolic compound, and c) a small amount of an organic accelerator. Ascorbic acid in an amount less than 800 ppm, preferably between about 100 ppm and 500 ppm, is the preferred dihydroxy enolic compound. The polishing compositions and processes are useful for substantially all metals and metallic compounds found in integrated circuits, but is particularly useful for tungsten. The present invention also pertains to surface-modified colloidal abrasive polishing compositions and associated methods of using these compositions, particularly for chemical mechanical planarization, wherein the slurry comprises low levels of chelating free radical quenchers, non-chelating free radical quenchers, or both.

摘要翻译： 化学机械抛光组合物包含1）水，2）任选的研磨材料，3）氧化剂，优选每种型氧化剂，4）少量可溶性金属离子氧化剂/抛光促进剂，金属离子抛光促进剂 与颗粒结合，例如磨料颗粒或两者; 和5）选自a）少量螯合剂中的至少一种，b）少量的二羟基烯醇化合物，和c）少量的有机促进剂。 少于800ppm，优选在约100ppm和500ppm之间的抗坏血酸是优选的二羟基烯醇化合物。 抛光组合物和方法对于在集成电路中发现的基本上所有的金属和金属化合物都是有用的，但对钨尤其有用。 本发明还涉及表面改性的胶体研磨抛光组合物以及使用这些组合物，特别是用于化学机械平面化的相关方法，其中浆料包含低水平的螯合自由基猝灭剂，非螯合自由基猝灭剂或二者。