PREVENTION OF OXIDATION OF SUBSTRATE SURFACES IN PROCESS CHAMBERS
    1.
    发明申请
    PREVENTION OF OXIDATION OF SUBSTRATE SURFACES IN PROCESS CHAMBERS 有权
    防止过程池中底物表面氧化

    公开(公告)号:US20110263134A1

    公开(公告)日:2011-10-27

    申请号:US12767657

    申请日:2010-04-26

    IPC分类号: H01L21/318 H01L21/302

    摘要: In some embodiments, a reducing gas ambient containing a reducing agent is established in a batch process chamber before substrates are subjected to a deposition. The reducing atmosphere is established before and/or during loading of the substrates into the process chamber, and can include flowing reducing gas into the process chamber while the chamber is open. The reducing gas can be a mixture of a reducing agent and an inert gas, with the reducing agent being a minority component of the reducing gas. Using the reducing gas ambient, oxidation of substrate surfaces is reduced.

    摘要翻译: 在一些实施方案中,在衬底经历沉积之前,在分批处理室中建立含有还原剂的还原气体环境。 还原气氛在将基材装载到处理室中之前和/或期间建立,并且可以包括在室打开时将还原气体流入处理室。 还原气体可以是还原剂和惰性气体的混合物,还原剂是还原气体的少数成分。 使用还原气体环境,基板表面的氧化降低。