公开(公告)号：US07804250B2

公开(公告)日：2010-09-28

申请号：US11684199

申请日：2007-03-09

申请人： Andrey Ushakov ,  Yuri Tolmachev ,  Vladimir Volynets ,  Won Ceak Pak ,  Vasily Pashkovskiy ,  Sung Chang Park ,  Yung Hee Lee

发明人： Andrey Ushakov ,  Yuri Tolmachev ,  Vladimir Volynets ,  Won Ceak Pak ,  Vasily Pashkovskiy ,  Sung Chang Park ,  Yung Hee Lee

IPC分类号： H05B6/00

CPC分类号： H01J37/321 ,  H01J37/32091

摘要： An apparatus and method to generate plasma which can be applied to semiconductor processing. The apparatus includes a chamber having a plasma generating space defined therein, a lower electrode positioned within the chamber, an upper electrode facing the lower electrode and disposed within the chamber to constitute a first plasma generating source, a second plasma generating source positioned at a higher location than that of a lower surface of the upper electrode and disposed at an outer circumference of the upper electrode, and a power supply to supply power to the first and second plasma generating sources.

摘要翻译： 一种可应用于半导体处理的等离子体生成装置和方法。 该装置包括具有限定在其中的等离子体产生空间的腔室，位于腔室内的下部电极，面对下部电极的上部电极，并设置在腔室内以构成第一等离子体发生源，第二等离子体发生源位于较高 位于上电极的下表面，并且设置在上电极的外周;以及电源，用于向第一和第二等离子体发生源供电。

公开(公告)号：US20080061702A1

公开(公告)日：2008-03-13

申请号：US11684199

申请日：2007-03-09

申请人： Andrey Ushakov ,  Yuri Tolmachev ,  Vladimir Volynets ,  Won Ceak Pak ,  Vasily Pashkovskiy ,  Sung Chang Park ,  Yung Hee Lee

发明人： Andrey Ushakov ,  Yuri Tolmachev ,  Vladimir Volynets ,  Won Ceak Pak ,  Vasily Pashkovskiy ,  Sung Chang Park ,  Yung Hee Lee

IPC分类号： H05H1/00

CPC分类号： H01J37/321 ,  H01J37/32091

摘要： An apparatus and method to generate plasma which can be applied to semiconductor processing. The apparatus includes a chamber having a plasma generating space defined therein, a lower electrode positioned within the chamber, an upper electrode facing the lower electrode and disposed within the chamber to constitute a first plasma generating source, a second plasma generating source positioned at a higher location than that of a lower surface of the upper electrode and disposed at an outer circumference of the upper electrode, and a power supply to supply power to the first and second plasma generating sources.

摘要翻译： 一种可应用于半导体处理的等离子体生成装置和方法。 该装置包括具有限定在其中的等离子体产生空间的腔室，位于腔室内的下部电极，面对下部电极的上部电极，并设置在腔室内以构成第一等离子体发生源，第二等离子体发生源位于较高 位于上电极的下表面，并且设置在上电极的外周;以及电源，用于向第一和第二等离子体发生源供电。