Plasma driven, N-type semiconductor, thermoelectric power superoxide ion generator with critical bias conditions
    1.
    发明授权
    Plasma driven, N-type semiconductor, thermoelectric power superoxide ion generator with critical bias conditions 失效
    等离子驱动,N型半导体,具有临界偏置条件的热电功率超氧化物离子发生器

    公开(公告)号:US07365956B2

    公开(公告)日:2008-04-29

    申请号:US11227634

    申请日:2005-09-15

    CPC classification number: H05H1/2406 B01D2258/06 H05H2001/2412

    Abstract: A plasma is generated inside a barrier enclosure made specifically of N-Type semiconductive material, said plasma thus generating a thermal gradient across said barrier which drives electrons through said barrier via the thermoelectric power of said N-Type semiconductor, said electrons thus being liberated on the opposing side of said barrier where they interact with oxygen in the air to form the superoxide ion, O2−, and a second electrode on said opposing being at a critical minimum negative bias potential to quench collateral production of positive ions and ensuring production only of negative, O2−, ions.

    Abstract translation: 在由N型半导体材料制成的阻挡外壳内部产生等离子体,所述等离子体因此产生横跨所述势垒的热梯度,该热梯度通过所述N型半导体的热电驱动电子通过所述势垒,因此所述电子被释放在 所述屏障的相对侧,其中它们与空气中的氧相互作用以形成超氧化物离子O 2,并且所述对置物上的第二电极处于临界最小值 负偏置电位可以消除正离子的旁路产生,并确保仅生产负极O 2离子。

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