公开(公告)号：US20160163978A1

公开(公告)日：2016-06-09

申请号：US14937735

申请日：2015-11-10

申请人： Symetrix Memory, LLC

发明人： Carlos A. Paz de Araujo ,  Jolanta Celinska ,  Christopher R. McWilliams

IPC分类号： H01L45/00

CPC分类号： H01L45/147 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1608

摘要： A resistive switching memory comprising a first electrode and a second electrode; an active resistive switching region between the first electrode and the second electrode, the resistive switching region comprising a transition metal oxide and a dopant comprising a ligand, the dopant having a first concentration; a first buffer region between the first electrode and the resistive switching material, the first buffer region comprising the transition metal oxide and the dopant, wherein the dopant has a second concentration that is greater than the first concentration. In one embodiment, the second concentration is twice the first concentration. In one embodiment, the first buffer region is thicker than the active resistive switching region.

摘要翻译： 一种电阻式开关存储器，包括第一电极和第二电极; 所述第一电极和所述第二电极之间的有源电阻开关区域，所述电阻开关区域包括过渡金属氧化物和包含配体的掺杂剂，所述掺杂剂具有第一浓度; 所述第一电极和所述电阻性开关材料之间的第一缓冲区，所述第一缓冲区包含所述过渡金属氧化物和所述掺杂剂，其中所述掺杂剂具有大于所述第一浓度的第二浓度。 在一个实施方案中，第二浓度是第一浓度的两倍。 在一个实施例中，第一缓冲区域比有源电阻开关区域厚。

公开(公告)号：US09722179B2

公开(公告)日：2017-08-01

申请号：US14937735

申请日：2015-11-10

申请人： Symetrix Memory, LLC

发明人： Carlos A. Paz de Araujo ,  Jolanta Celinska ,  Christopher R. McWilliams

IPC分类号： H01L45/00

CPC分类号： H01L45/147 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1608

摘要： A resistive switching memory comprising a first electrode and a second electrode; an active resistive switching region between the first electrode and the second electrode, the resistive switching region comprising a transition metal oxide and a dopant comprising a ligand, the dopant having a first concentration; a first buffer region between the first electrode and the resistive switching material, the first buffer region comprising the transition metal oxide and the dopant, wherein the dopant has a second concentration that is greater than the first concentration. In one embodiment, the second concentration is twice the first concentration. In one embodiment, the first buffer region is thicker than the active resistive switching region.