公开(公告)号：US6132585A

公开(公告)日：2000-10-17

申请号：US749727

申请日：1996-11-15

申请人： Takafumi Midorikawa ,  Tsutomu Murakami ,  Takahiro Mori ,  Hirofumi Ichinose

发明人： Takafumi Midorikawa ,  Tsutomu Murakami ,  Takahiro Mori ,  Hirofumi Ichinose

IPC分类号： H01L31/04 ,  H01L31/20 ,  C25D5/02

CPC分类号： H01L31/208 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S136/29

摘要： The present invention aims to provide a highly reliable semiconductor element with high performance, and a fabrication method for such highly reliable semiconductor with excellent mass producibility. The photovoltaic elements comprise an electric conductor, semiconductor regions and a transparent conductor layer, which are sequentially formed on a substrate. The shunt resistance in the semiconductor element is rendered in the range from 1.times.10.sup.3 .OMEGA.cm.sup.2 to 1.times.10.sup.6 .OMEGA.cm.sup.2 by performing a forming treatment and a short circuit passivation treatment after forming the transparent conductor layer, and then selectively covering with insulation the defective portions with a cationic or anionic electrodeposited resin, or performing a forming treatment, after forming the semiconductor layers, then selectively covering with insulation the defective portions with a cationic or anionic electrodeposited resin, and then forming the transparent conductor layer.

摘要翻译： 本发明旨在提供一种具有高性能的高可靠性半导体元件，以及具有优异的大规模生产能力的这种高可靠性半导体的制造方法。 光电元件包括​​依次形成在基板上的电导体，半导体区域和透明导体层。 通过在形成透明导体层之后进行成形处理和短路钝化处理，半导体元件中的分流电阻在1×10 3欧姆·cm2至1×10 6欧姆·平方厘米的范围内，然后用阳离子选择性地覆盖缺陷部分 或阴离子电沉积树脂，或者在形成半导体层之后进行成形处理，然后用阳离子或阴离子电沉积树脂绝缘地选择性地覆盖缺陷部分，然后形成透明导体层。