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1.发明授权Method for producing epitaxial wafer with buried diffusion layer and epitaxial wafer with buried diffusion layer 有权具有掩埋扩散层的外延晶片和埋入扩散层的外延晶片的制造方法公开(公告)号：US07799652B2
公开(公告)日：2010-09-21
申请号：US11604345
申请日：2006-11-27
IPC分类号： H01L21/331
CPC分类号： H01L21/74 , H01L21/02057 , H01L21/02381 , H01L21/02532 , H01L21/02658 , H01L21/31111
摘要： There is disclosed a method for producing an epitaxial wafer with a buried diffusion layer comprising: implanting an impurity into a silicon single crystal wafer; subsequently diffusing the impurity in the wafer to form a diffusion layer; at least removing an oxide film on the diffusion layer; and thereafter forming a silicon epitaxial layer over the wafer to produce a silicon epitaxial wafer with a buried diffusion layer; wherein at least the oxide film on the diffusion layer is removed by etching with hydrofluoric acid to which a surfactant is added, and then the silicon epitaxial layer is formed. There can be provided a method for producing an epitaxial wafer with a buried diffusion layer in which generation of crystal defects in a silicon epitaxial layer is reduced effectively and an epitaxial wafer with a buried diffusion layer.
摘要翻译： 公开了一种用于制造具有埋入扩散层的外延晶片的方法，包括：将杂质注入到硅单晶晶片中; 随后在晶片中扩散杂质以形成扩散层; 至少除去扩散层上的氧化膜; 然后在晶片上形成硅外延层以制造具有埋入扩散层的硅外延晶片; 其中至少通过用加入表面活性剂的氢氟酸蚀刻除去扩散层上的氧化膜，然后形成硅外延层。 可以提供一种制造具有埋入扩散层的外延晶片的方法，其中有效地降低硅外延层中的晶体缺陷的产生和具有掩埋扩散层的外延晶片。
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公开(公告)号：US5007214A
公开(公告)日：1991-04-16
申请号：US504906
申请日：1990-04-05
申请人： Takashi Itami , Tadao Yuri , Toru Aoyagi
发明人： Takashi Itami , Tadao Yuri , Toru Aoyagi
CPC分类号： E04H3/165 , E04B1/3448 , E04B7/163
摘要： An openable dome-shaped roof structure is provided upon a circular side wall and comprises a crescent-shaped fixed roof section, a pair of pivotable roof sections and a pair of slidable roof sections. Each pivotable roof section is connected to a respective slidable roof section by a pivot at peripheral end portions thereof so that the pivotable roof section can rotate to a position above the slidable roof section. The slidable roof sections are each provided to be able to rotate toward the upper surface of the fixed roof section about the center of the circle of the side wall.
摘要翻译： 一个可开启的圆顶形屋顶结构设置在一个圆形的侧壁上，包括一个新月形的固定屋顶部分，一对可枢转的屋顶部分和一对可滑动的屋顶部分。 每个可枢转的屋顶部分通过其周边端部处的枢轴连接到相应的可滑动的屋顶部分，使得可枢转的屋顶部分可以旋转到可滑动顶部部分上方的位置。 可滑动的屋顶部分各自设置成能够围绕侧壁的圆的中心朝向固定屋顶部分的上表面旋转。
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3.发明申请Method for producing epitaxial wafer with buried diffusion layer and epitaxial wafer with buried diffusion layer 有权具有掩埋扩散层的外延晶片和埋入扩散层的外延晶片的制造方法公开(公告)号：US20070122990A1
公开(公告)日：2007-05-31
申请号：US11604345
申请日：2006-11-27
IPC分类号： H01L21/331 , H01L29/00
CPC分类号： H01L21/74 , H01L21/02057 , H01L21/02381 , H01L21/02532 , H01L21/02658 , H01L21/31111
摘要： There is disclosed a method for producing an epitaxial wafer with a buried diffusion layer comprising: implanting an impurity into a silicon single crystal wafer; subsequently diffusing the impurity in the wafer to form a diffusion layer; at least removing an oxide film on the diffusion layer; and thereafter forming a silicon epitaxial layer over the wafer to produce a silicon epitaxial wafer with a buried diffusion layer; wherein at least the oxide film on the diffusion layer is removed by etching with hydrofluoric acid to which a surfactant is added, and then the silicon epitaxial layer is formed. There can be provided a method for producing an epitaxial wafer with a buried diffusion layer in which generation of crystal defects in a silicon epitaxial layer is reduced effectively and an epitaxial wafer with a buried diffusion layer.
摘要翻译： 公开了一种用于制造具有埋入扩散层的外延晶片的方法，包括：将杂质注入到硅单晶晶片中; 随后在晶片中扩散杂质以形成扩散层; 至少除去扩散层上的氧化膜; 然后在晶片上形成硅外延层以制造具有埋入扩散层的硅外延晶片; 其中至少通过用加入表面活性剂的氢氟酸蚀刻除去扩散层上的氧化膜，然后形成硅外延层。 可以提供一种制造具有埋入扩散层的外延晶片的方法，其中有效地降低硅外延层中的晶体缺陷的产生和具有掩埋扩散层的外延晶片。
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