公开(公告)号：US20060079155A1

公开(公告)日：2006-04-13

申请号：US11244172

申请日：2005-10-06

申请人： Masaru Nakamura ,  Yosuke Watanabe ,  Satoshi Kobayashi ,  Noboru Takeda ,  Masanori Yoshida ,  Takashi Sanpei ,  Masahiro Murata

发明人： Masaru Nakamura ,  Yosuke Watanabe ,  Satoshi Kobayashi ,  Noboru Takeda ,  Masanori Yoshida ,  Takashi Sanpei ,  Masahiro Murata

IPC分类号： B24B1/00

CPC分类号： H01L21/302 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  B24B7/228 ,  H01L21/02021

摘要： A wafer grinding method for grinding the surface to be ground of a wafer having an arcuatedly chamfered outer peripheral surface, comprising an outer peripheral portion removal step for removing the outer peripheral portion of the wafer by applying a laser beam from one surface side of the wafer along the outer periphery at a location on the inside of the outer periphery by a predetermined distance; and a grinding step for grinding the surface to be ground of the wafer whose outer peripheral portion has been removed, to a predetermined finish thickness.

摘要翻译： 一种用于研磨具有圆弧倒角外周面的晶片被研磨表面的晶片研磨方法，包括外周部分去除步骤，用于通过从晶片的一个表面侧施加激光来去除晶片的外周部分 沿着所述外周的内侧的位置沿所述外周延伸预定距离; 以及研磨步骤，用于将已经除去外周部分的晶片的被研磨表面研磨至预定的精加工厚度。