Multi-port memory device having precharged bit lines
    2.
    发明授权
    Multi-port memory device having precharged bit lines 失效
    具有预充电位线的多端口存储器件

    公开(公告)号:US5317537A

    公开(公告)日:1994-05-31

    申请号:US888493

    申请日:1992-05-27

    CPC分类号: G11C7/14 G11C8/16

    摘要: A multi-port memory device has a memory cell array including one or more memory blocks each of which has a plurality of memory cells arranged in rows and columns, and a plurality of dummy cells, with one dummy cell being provided for each row of memory cells in each of the memory blocks so that the dummy cells are connected with associated ones of the word lines extending in the row direction. The dummy cells are further connected with dummy cell bit lines extending in the column direction. Sense amplifiers are connected to receive outputs of those memory cells in the memory cell array which are selected in a memory cell selection operation and outputs of those dummy cells among the plurality of dummy cells which are selected in the memory cell selection operation for amplifying differences between the selected memory cell outputs and the selected dummy cell outputs. Precharging and shielding arrangements are also provided for improved operation.

    摘要翻译: 多端口存储器件具有包括一个或多个存储器块的存储单元阵列,每个存储块具有以行和列排列的多个存储器单元,以及多个虚设单元,每个存储器行提供一个虚拟单元 每个存储器块中的单元,使得虚设单元与在行方向上延伸的字线相关联地连接。 虚拟单元进一步与在列方向上延伸的虚拟单元位线连接。 连接感测放大器以接收在存储单元选择操作中选择的存储单元阵列中的这些存储单元的输出,并且在存储单元选择操作中选择的多个虚设单元中的这些虚设单元的输出, 所选择的存储单元输出和所选择的虚拟单元输出。 还提供了预充电和屏蔽装置,以改善操作。