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公开(公告)号:US07180153B2
公开(公告)日:2007-02-20
申请号:US09983166
申请日:2001-10-23
申请人: Takeshi Kamino , Toshiaki Tsutsumi , Shuji Kodama , Takio Ohno
发明人: Takeshi Kamino , Toshiaki Tsutsumi , Shuji Kodama , Takio Ohno
IPC分类号: H01L29/00
CPC分类号: H01L28/24 , H01L23/26 , H01L27/0802 , H01L2924/0002 , H01L2924/00
摘要: There is provided a semiconductor device with a configuration in which a dummy silicide area 11 is provided in the vicinity of a non-silicide area 2 to easily capture residual refractory metals, resulting in an improved yield by preventing the trapping of residual refractory metals into a non-silicide area and thereby reducing a junction leakage within the non-silicide area.
摘要翻译: 提供了一种半导体器件,其具有在非硅化物区域2附近设置虚拟硅化物区域11以容易地捕获残余的难熔金属,从而通过防止将残余难熔金属捕获到 非硅化物区域,从而减少非硅化物区域内的结漏电。
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公开(公告)号:US20080272461A1
公开(公告)日:2008-11-06
申请号:US12213957
申请日:2008-06-26
申请人: Takeshi Kamino , Toshiaki Tsutsumi , Shuji Kodama , Takio Ohno
发明人: Takeshi Kamino , Toshiaki Tsutsumi , Shuji Kodama , Takio Ohno
IPC分类号: H01L29/00
CPC分类号: H01L28/24 , H01L23/26 , H01L27/0802 , H01L2924/0002 , H01L2924/00
摘要: There is provided a semiconductor device with a configuration in which a dummy silicide area 11 is provided in the vicinity of a non-silicide area 2 to easily capture residual refractory metals, resulting in an improved yield by preventing the trapping of residual refractory metals into a non-silicide area and thereby reducing a junction leakage within the non-silicide area.
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公开(公告)号:US07408239B2
公开(公告)日:2008-08-05
申请号:US11650978
申请日:2007-01-09
申请人: Takeshi Kamino , Toshiaki Tsutsumi , Shuji Kodama , Takio Ohno
发明人: Takeshi Kamino , Toshiaki Tsutsumi , Shuji Kodama , Takio Ohno
IPC分类号: H01L29/00
CPC分类号: H01L28/24 , H01L23/26 , H01L27/0802 , H01L2924/0002 , H01L2924/00
摘要: There is provided a semiconductor device with a configuration in which a dummy silicide area 11 is provided in the vicinity of a non-silicide area 2 to easily capture residual refractory metals, resulting in an improved yield by preventing the trapping of residual refractory metals into a non-silicide area and thereby reducing a junction leakage within the non-silicide area.
摘要翻译: 提供了一种半导体器件,其具有在非硅化物区域2附近设置虚拟硅化物区域11以容易地捕获残余的难熔金属,从而通过防止将残余难熔金属捕获到 非硅化物区域,从而减少非硅化物区域内的结漏电。
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公开(公告)号:US20070114666A1
公开(公告)日:2007-05-24
申请号:US11650978
申请日:2007-01-09
申请人: Takeshi Kamino , Toshiaki Tsutsumi , Shuji Kodama , Takio Ohno
发明人: Takeshi Kamino , Toshiaki Tsutsumi , Shuji Kodama , Takio Ohno
IPC分类号: H01L23/48
CPC分类号: H01L28/24 , H01L23/26 , H01L27/0802 , H01L2924/0002 , H01L2924/00
摘要: There is provided a semiconductor device with a configuration in which a dummy silicide area 11 is provided in the vicinity of a non-silicide area 2 to easily capture residual refractory metals, resulting in an improved yield by preventing the trapping of residual refractory metals into a non-silicide area and thereby reducing a junction leakage within the non-silicide area.
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