摘要:
A pattern position measuring method measures two-dimensional positions of a hyperfine pattern formed on the surface of a substrate. This method comprises a pattern position measuring step of measuring the positions of the pattern in a first flexural configuration produced in a supported state where the measured substrate is supported in first a plurality of positions of the measured substrate on a stage, a flexural configuration detecting step of detecting the first flexural configuration of the surface of the measured substrate, and a correcting step of correcting the pattern positions in the first flexural configuration that are measured by the pattern position measuring step to pattern positions in a second flexural configuration on the basis of the pattern positions in the first flexural configuration that are measured by the pattern position measuring step, the first flexural configuration detected by the flexural configuration detecting step and the previously stored second flexural configuration of the surface of the measured substrate which is produced when the measured substrate is supported in a second plurality of positions different from the first plurality of positions.
摘要:
Pattern coordinates which have been measured on a substrate such as reticle, a mask or the like are also accurately reflected when this reticle is mounted to an exposure device. Thus, measurement deviations are suppressed. In accordance with the present invention, the device for measuring pattern coordinates includes an XY stage for the reticle to be mounted upon and a detection system for measuring the pattern on the reticle. The detection system is arranged under the XY stage and is made up of an objective lens and an optical detection system. The device for measuring pattern coordinates further includes a device for detecting the position of the XY stage comprising X and Y axis interferometers. The reticle is mounted upon the XY stage with its pattern surface facing downwards. This direction is the same orientation as when it is mounted in an exposure device. A laser beam is focused upon the pattern surface from under the XY stage. The pattern upon the reticle is detected by light scattered from the edges of the pattern. This light is detected by the detection system. When the pattern is detected, the position of the XY stage is read out from the X axis and Y axis interferometers.
摘要:
Position of a pattern of a sample placed on a stage is detected by detecting position of a pattern edge. Distortion of the whole sample surface is detected by measuring height of the sample, slope of the surface of the sample at a detected pattern edge position is calculated, and the detected position of the pattern edge is corrected in accordance with the calculated slope.
摘要:
A method and apparatus for the precision measurement of positions, dimensions, etc., of a pattern or mark formed on the surface of a flat object such as a photographic mask or reticle. The amount of vertical deviation of the object with respect to a reference plane is detected at each of a plurality of measuring points and the incline of the surface of the object with respect to the reference plane at each of the measuring points is determined in accordance with the amounts of deviation and the distance between the measuring points. The coordinate positions of each of the measuring points in the reference plane are measured in accordance with the amount of movement of the object parallel to the reference plane and the coordinate positions are corrected in accordance with the corresponding incline.