公开(公告)号：US07944000B2

公开(公告)日：2011-05-17

申请号：US11811860

申请日：2007-06-11

申请人： Masaya Ohtsuka ,  Hiroaki Abe ,  Tatsuo Abe, legal representative

发明人： Masaya Ohtsuka ,  Hiroaki Abe

IPC分类号： H01L21/70

CPC分类号： H01L27/0802 ,  H01L28/20 ,  H01L29/66166 ,  H01L29/8605

摘要： A method for manufacturing a semiconductor resistor includes forming a well region in a semiconductor substrate, with the well region serving as a resistive region, forming a pair of contact regions spaced apart from each other in the well region, and forming a diffusion region in an intermediate portion between the pair of contact regions on a surface of the well region. The diffusion region is configured to adjust resistance and temperature dependence of the semiconductor resistor.

摘要翻译： 一种制造半导体电阻器的方法包括在半导体衬底中形成阱区，阱区用作电阻区，在阱区中形成彼此间隔的一对接触区，并形成扩散区 在该区域的表面上的一对接触区域之间的中间部分。 扩散区域被配置为调节半导体电阻器的电阻和温度依赖性。