公开(公告)号：US08734901B2

公开(公告)日：2014-05-27

申请号：US13401919

申请日：2012-02-22

申请人： Keisuke Suzuki ,  Pao-Hwa Chou ,  Te ching Chang

发明人： Keisuke Suzuki ,  Pao-Hwa Chou ,  Te ching Chang

IPC分类号： C23C16/00

CPC分类号： H01L21/0228 ,  C23C16/345 ,  C23C16/45527 ,  C23C16/52 ,  H01L21/0217

摘要： A film deposition method of depositing a thin film by alternately supplying at least a first source gas and a second source gas to a substrate is disclosed. The film deposition method includes steps of evacuating a process chamber where the substrate is accommodated, without supplying any gas to the process chamber; supplying an inert gas to the process chamber until a pressure within the process chamber becomes a predetermined pressure; supplying the first source gas to the process chamber filled with the inert gas at the predetermined pressure without evacuating the process chamber; stopping supplying the first source gas to the process chamber and evacuating the process chamber; supplying the second source gas to the process chamber; and stopping supplying the second source gas to the process chamber and evacuating the process chamber.

摘要翻译： 公开了一种通过交替地将至少第一源气体和第二源气体供应到基底而沉积薄膜的成膜方法。 膜沉积方法包括以下步骤：将处理室排出到容纳基板的步骤，而不向处理室供应任何气体; 向所述处理室供应惰性气体，直到所述处理室内的压力变为预定压力; 将第一源气体以预定压力供给到填充有惰性气体的处理室，而不需要排空处理室; 停止向处理室供应第一源气体并抽空处理室; 将第二源气体供应到处理室; 并停止向处理室供应第二源气体并抽空处理室。

公开(公告)号：US20120269969A1

公开(公告)日：2012-10-25

申请号：US13401919

申请日：2012-02-22

申请人： Keisuke SUZUKI ,  Pao-Hwa Chou ,  Te Ching Chang

发明人： Keisuke SUZUKI ,  Pao-Hwa Chou ,  Te Ching Chang

IPC分类号： C23C16/455

CPC分类号： H01L21/0228 ,  C23C16/345 ,  C23C16/45527 ,  C23C16/52 ,  H01L21/0217

摘要： A film deposition method of depositing a thin film by alternately supplying at least a first source gas and a second source gas to a substrate is disclosed. The film deposition method includes steps of evacuating a process chamber where the substrate is accommodated, without supplying any gas to the process chamber; supplying an inert gas to the process chamber until a pressure within the process chamber becomes a predetermined pressure; supplying the first source gas to the process chamber filled with the inert gas at the predetermined pressure without evacuating the process chamber; stopping supplying the first source gas to the process chamber and evacuating the process chamber; supplying the second source gas to the process chamber; and stopping supplying the second source gas to the process chamber and evacuating the process chamber.

摘要翻译： 公开了一种通过交替地将至少第一源气体和第二源气体供应到基底而沉积薄膜的成膜方法。 膜沉积方法包括以下步骤：将处理室排出到容纳基板的步骤，而不向处理室供应任何气体; 向所述处理室供应惰性气体，直到所述处理室内的压力变为预定压力; 将第一源气体以预定压力供给到填充有惰性气体的处理室，而不需要排空处理室; 停止向处理室供应第一源气体并抽空处理室; 将第二源气体供应到处理室; 并停止向处理室供应第二源气体并抽空处理室。