公开(公告)号：US11721723B2

公开(公告)日：2023-08-08

申请号：US17321046

申请日：2021-05-14

Applicant: Intel Corporation ,  Technishce Universiteit Delft

Inventor： Kanwaljit Singh ,  James S. Clarke ,  Menno Veldhorst ,  Lieven Mark Koenraad Vandersypen

IPC: H01L29/12 ,  G06N10/00 ,  H01L29/66 ,  B82Y10/00 ,  B82Y40/00

CPC classification number: H01L29/122 ,  G06N10/00 ,  H01L29/66977 ,  B82Y10/00 ,  B82Y40/00

Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and an array of regularly spaced magnet lines.

公开(公告)号：US20210280676A1

公开(公告)日：2021-09-09

申请号：US17321046

申请日：2021-05-14

Applicant: Intel Corporation ,  Technishce Universiteit Delft

Inventor： Kanwaljit Singh ,  James S. Clarke ,  Menno Veldhorst ,  Lieven Mark Koenraad Vandersypen

IPC: H01L29/12 ,  G06N10/00 ,  H01L29/66

Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and an array of regularly spaced magnet lines.